DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Micron Technology |
零件包装代码 | BGA |
包装说明 | VFBGA, BGA90,9X15,32 |
针数 | 90 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 6 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 133 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 2,4,8 |
JESD-30 代码 | R-PBGA-B90 |
JESD-609代码 | e1 |
长度 | 13 mm |
内存密度 | 268435456 bit |
内存集成电路类型 | DDR DRAM |
内存宽度 | 32 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 90 |
字数 | 8388608 words |
字数代码 | 8000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 8MX32 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | VFBGA |
封装等效代码 | BGA90,9X15,32 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 1.8 V |
认证状态 | Not Qualified |
刷新周期 | 4096 |
座面最大高度 | 1 mm |
自我刷新 | YES |
连续突发长度 | 2,4,8 |
最大待机电流 | 0.00001 A |
最大压摆率 | 0.12 mA |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 8 mm |
MT46H8M32LFB5-75IT | MT46H16M16LFBF-6IT | MT46H8M32LFB5-75:A | MT46H8M32LFB5-10IT | MT46H16M16LFBF-75:A | MT46H8M32LFB5-6:A | MT46H8M32LFB5-6IT | MT46H16M16LFBF-6:A | |
---|---|---|---|---|---|---|---|---|
描述 | DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 16MX16, 5.5ns, CMOS, PBGA60, 8 X 9 MM, LEAD FREE, PLASTIC, VFBGA-60 | DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, 8 X 9 MM, LEAD FREE, PLASTIC, VFBGA-60 | DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | DDR DRAM, 16MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, LEAD FREE, PLASTIC, VFBGA-60 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | VFBGA, BGA90,9X15,32 | VFBGA, BGA60,9X10,32 | VFBGA, BGA90,9X15,32 | VFBGA, | VFBGA, BGA60,9X10,32 | VFBGA, BGA90,9X15,32 | VFBGA, BGA90,9X15,32 | VFBGA, BGA60,9X10,32 |
针数 | 90 | 60 | 90 | 90 | 60 | 90 | 90 | 60 |
Reach Compliance Code | compliant | compliant | compliant | compliant | unknown | unknown | compliant | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 6 ns | 5.5 ns | 6 ns | 7 ns | 6 ns | 5 ns | 5.5 ns | 5 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-PBGA-B90 | R-PBGA-B60 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B60 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B60 |
JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 | e1 | e1 |
长度 | 13 mm | 9 mm | 13 mm | 13 mm | 9 mm | 13 mm | 13 mm | 9 mm |
内存密度 | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 32 | 16 | 32 | 32 | 16 | 32 | 32 | 16 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 90 | 60 | 90 | 90 | 60 | 90 | 90 | 60 |
字数 | 8388608 words | 16777216 words | 8388608 words | 8388608 words | 16777216 words | 8388608 words | 8388608 words | 16777216 words |
字数代码 | 8000000 | 16000000 | 8000000 | 8000000 | 16000000 | 8000000 | 8000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C | 85 °C | 70 °C |
组织 | 8MX32 | 16MX16 | 8MX32 | 8MX32 | 16MX16 | 8MX32 | 8MX32 | 16MX16 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.95 V | 1.9 V | 1.95 V | 1.95 V | 1.9 V | 1.95 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | - | - | 不含铅 | - |
最大时钟频率 (fCLK) | 133 MHz | 166 MHz | 133 MHz | - | 133 MHz | 166 MHz | 166 MHz | 166 MHz |
I/O 类型 | COMMON | COMMON | COMMON | - | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | - | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装等效代码 | BGA90,9X15,32 | BGA60,9X10,32 | BGA90,9X15,32 | - | BGA60,9X10,32 | BGA90,9X15,32 | BGA90,9X15,32 | BGA60,9X10,32 |
电源 | 1.8 V | 1.8 V | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
刷新周期 | 4096 | 8192 | 4096 | - | 8192 | 4096 | 4096 | 8192 |
连续突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | - | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
最大待机电流 | 0.00001 A | 0.00001 A | - | - | 0.00001 A | - | 0.00001 A | 0.00001 A |
最大压摆率 | 0.12 mA | 0.12 mA | 0.14 mA | - | 0.1 mA | 0.16 mA | 0.14 mA | 0.1 mA |
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