5962R9568301VXC概述

AND Gate, HCT Series, 4-Func, 2-Input, CMOS, CDFP14

5962R9568301VXC规格参数

参数名称	属性值
包装说明	,
Reach Compliance Code	unknown
其他特性	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY
系列	HCT
JESD-30 代码	R-CDFP-F14
JESD-609代码	e4
负载电容（CL）	50 pF
逻辑集成电路类型	AND GATE
功能数量	4
输入次数	2
端子数量	14
最高工作温度	125 °C
最低工作温度	-55 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLATPACK
传播延迟（tpd）	20 ns
认证状态	Not Qualified
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	GOLD
端子形式	FLAT
端子位置	DUAL
总剂量	100k Rad(Si) V
Base Number Matches	1

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5962R9568301VXC相似产品对比

	5962R9568301VXC	5962R9568301VCX	5962R9568301VXX	5962R9568301VCC	HCTS08DMSH	HCTS08KMSH
描述	AND Gate, HCT Series, 4-Func, 2-Input, CMOS, CDFP14	AND Gate, HCT Series, 4-Func, 2-Input, CMOS, CDIP14	AND Gate, HCT Series, 4-Func, 2-Input, CMOS, CDFP14	AND Gate, HCT Series, 4-Func, 2-Input, CMOS, CDIP14	AND Gate, HCT Series, 4-Func, 2-Input, CMOS, CDIP14	AND Gate, HCT Series, 4-Func, 2-Input, CMOS, CDFP14
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
其他特性	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY	RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY
系列	HCT	HCT	HCT	HCT	HCT	HCT
JESD-30 代码	R-CDFP-F14	R-CDIP-T14	R-CDFP-F14	R-CDIP-T14	R-CDIP-T14	R-CDFP-F14
逻辑集成电路类型	AND GATE	AND GATE	AND GATE	AND GATE	AND GATE	AND GATE
功能数量	4	4	4	4	4	4
输入次数	2	2	2	2	2	2
端子数量	14	14	14	14	14	14
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	IN-LINE	FLATPACK	IN-LINE	IN-LINE	FLATPACK
传播延迟（tpd）	20 ns	20 ns	20 ns	20 ns	25 ns	25 ns
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	NO	YES	NO	NO	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	THROUGH-HOLE	FLAT	THROUGH-HOLE	THROUGH-HOLE	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
总剂量	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V
JESD-609代码	e4	-	-	e4	e0	e0
负载电容（CL）	50 pF	-	-	50 pF	50 pF	50 pF
端子面层	GOLD	-	-	GOLD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1	1	1	1	-

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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