mosfet N-CH 55v 40a TO-262
| 参数名称 | 属性值 |
| Datasheets | |
| NP40N055xLE | |
| PCN Obsolescence/ EOL | |
| Multiple Devices 28/Aug/2013 | |
| Standard Package | 50 |
| Category | Discrete Semiconductor Products |
| Family | FETs - Single |
| 系列 Packaging | Tube |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1950pF @ 25V |
| Power - Max | 1.8W |
| Mounting Type | Through Hole |
| 封装 / 箱体 Package / Case | TO-262-3 Full Pack, I²Pak |
| Supplier Device Package | TO-262-3 |
| NP40N055NLE-S18-AY | NP40N055MLE-S18-AY | NP40N055KLE-E1-AY | NP40N055ELE-E1-AY | NP40N055ELE-E2-AY | |
|---|---|---|---|---|---|
| 描述 | mosfet N-CH 55v 40a TO-262 | mosfet N-CH 55v 40a TO-220 | mosfet N-CH 55v 40a TO-263 | NP40N055ELE-E1-AY | 40A, 55V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN |
| Brand Name | - | Renesas | Renesas | Renesas | - |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 零件包装代码 | - | MP-25K | MP-25ZK | D2PAK | D2PAK |
| 包装说明 | - | LEAD FREE, MP-25K, TO-220, 3 PIN | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | - | 3 | 3 | 4 | 4 |
| Reach Compliance Code | - | compli | compli | compliant | compliant |
| ECCN代码 | - | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | - | 64 mJ | 64 mJ | 64 mJ | 64 mJ |
| 外壳连接 | - | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (Abs) (ID) | - | 40 A | 40 A | 40 A | 40 A |
| 最大漏极电流 (ID) | - | 40 A | 40 A | 40 A | 40 A |
| 最大漏源导通电阻 | - | 0.032 Ω | 0.032 Ω | 0.032 Ω | 0.032 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | - | TO-220AB | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 代码 | - | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | - | 1 | 1 | 1 | 1 |
| 端子数量 | - | 3 | 2 | 2 | 2 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 66 W | 66 W | 66 W | 66 W |
| 最大脉冲漏极电流 (IDM) | - | 100 A | 100 A | 100 A | 100 A |
| 认证状态 | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | - | NO | YES | YES | YES |
| 端子形式 | - | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
| 端子位置 | - | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON | SILICON | SILICON |
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