74LVC1G10
Single 3-input NAND gate
Rev. 3 — 8 December 2011
Product data sheet
1. General description
The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate.
The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of
this device in a mixed 3.3 V and 5 V environment.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
time.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V).
24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C
NXP Semiconductors
74LVC1G10
Single 3-input NAND gate
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74LVC1G10GW
74LVC1G10GV
74LVC1G10GM
74LVC1G10GF
74LVC1G10GN
74LVC1G10GS
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
SC-88
SC-74
XSON6
XSON6
XSON6
XSON6
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
1.45
0.5 mm
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
1
0.5 mm
extremely thin small outline package; no leads;
6 terminals; body 0.9
1.0
0.35 mm
extremely thin small outline package; no leads;
6 terminals; body 1.0
1.0
0.35 mm
Version
SOT363
SOT457
SOT886
SOT891
SOT1115
SOT1202
Type number
4. Marking
Table 2.
Marking
Marking code
[1]
YM
YM
YM
YM
YM
YM
Type number
74LVC1G10GW
74LVC1G10GV
74LVC1G10GM
74LVC1G10GF
74LVC1G10GN
74LVC1G10GS
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
A
B
C
1
3
6
001aag686
A
4
Y
1
3
6
&
B
4
C
001aag688
Y
001aag687
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 8 December 2011
2 of 17
NXP Semiconductors
74LVC1G10
Single 3-input NAND gate
6. Pinning information
6.1 Pinning
74LVC1G10
74LVC1G10
A
GND
1
2
6
5
C
GND
V
CC
B
B
3
001aag689
A
1
6
C
A
GND
74LVC1G10
1
2
3
6
5
4
C
V
CC
Y
2
5
V
CC
3
4
Y
B
4
Y
001aag690
001aag691
Transparent top view
Transparent top view
Fig 4.
Pin configuration SOT363
and SOT457
Fig 5.
Pin configuration SOT886
Fig 6.
Pin configuration SOT891,
SOT1115 and SOT1202
6.2 Pin description
Table 3.
Symbol
A
GND
B
Y
V
CC
C
Pin description
Pin
1
2
3
4
5
6
Description
data input
ground (0 V)
data input
data output
supply voltage
data input
7. Functional description
Table 4.
Input
A
H
L
X
X
[1]
Function table
[1]
Output
B
H
X
L
X
C
H
X
X
L
Y
L
H
H
H
H = HIGH voltage level; L = LOW voltage level; X = don’t care.
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 8 December 2011
3 of 17
NXP Semiconductors
74LVC1G10
Single 3-input NAND gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
P
tot
T
stg
[1]
[2]
[3]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
total power dissipation
storage temperature
Conditions
V
I
< 0 V
[1]
Min
0.5
50
0.5
-
[1][2]
[1][2]
Max
+6.5
-
+6.5
50
V
CC
+ 0.5
+6.5
50
100
-
250
+150
Unit
V
mA
V
mA
V
V
mA
mA
mA
mW
C
V
O
> V
CC
or V
O
< 0 V
Active mode
Power-down mode
V
O
= 0 V to V
CC
0.5
0.5
-
-
100
T
amb
=
40 C
to +125
C
[3]
-
65
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
For SC-88 and SC-74A packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 package: above 118
C
the value of P
tot
derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t/V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
1.65
0
0
0
40
-
-
Typ
-
-
-
-
-
-
-
Max
5.5
5.5
V
CC
5.5
+125
20
10
Unit
V
V
V
V
C
ns/V
ns/V
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 8 December 2011
4 of 17
NXP Semiconductors
74LVC1G10
Single 3-input NAND gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
IH
HIGH-level input
voltage
Conditions
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
IL
LOW-level input
voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
100 A;
V
CC
= 1.65 V to 5.5 V
I
O
=
4
mA; V
CC
= 1.65 V
I
O
=
8
mA; V
CC
= 2.3 V
I
O
=
12
mA; V
CC
= 2.7 V
I
O
=
24
mA; V
CC
= 3.0 V
I
O
=
32
mA; V
CC
= 4.5 V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 100
A;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
I
I
OFF
I
CC
I
CC
C
I
input leakage
current
power-off
leakage current
supply current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
V
I
or V
O
= 5.5 V; V
CC
= 0 V
V
I
= 5.5 V or GND; I
O
= 0 A;
V
CC
= 1.65 V to 5.5 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
5
3
0.10
0.45
0.30
0.40
0.55
0.55
5
10
10
500
-
-
-
-
-
-
-
-
-
-
-
-
0.10
0.70
0.45
0.60
0.80
0.80
100
200
200
5000
-
V
V
V
V
V
V
A
A
A
A
pF
V
CC
0.1
1.2
1.9
2.2
2.3
3.8
-
-
-
-
-
-
-
-
-
-
-
-
V
CC
0.1
0.95
1.7
1.9
2.0
3.4
-
-
-
-
-
-
V
V
V
V
V
V
40 C
to +85
C
Min
0.65V
CC
1.7
2.0
0.7V
CC
-
-
-
-
Typ
[1]
-
-
-
-
-
-
-
-
Max
-
-
-
-
0.35V
CC
0.7
0.8
0.3V
CC
40 C
to +125
C
Min
0.65V
CC
1.7
2.0
0.7V
CC
-
-
-
-
Max
-
-
-
-
0.7
0.8
0.3V
CC
V
V
V
V
V
V
V
Unit
0.35V
CC
V
additional supply V
I
= V
CC
0.6 V; I
O
= 0 A;
current
V
CC
= 2.3 V to 5.5 V; per pin
input
capacitance
V
CC
= 3.3 V;
V
I
= GND to V
CC
[1]
All typical values are measured at T
amb
= 25
C.
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 8 December 2011
5 of 17
嵌入式系统
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