The documentation and process
conversion measures necessary to comply
with this revision shall be completed by
19 June 2003.
INCH-POUND
MIL-PRF-19500/375F
19 March 2003
SUPERSEDING
MIL-PRF-19500/375E
2 October 2001
PERFORMANCE SPECIFICATION
* SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE,
SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, junction, silicon, field-effect
depletion mode transistors. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500.
* 1.2 Physical dimensions. See figure 1 (similar to TO-72) and figure 2 (surface mount).
* 1.3 Maximum ratings.
P
T
(1)
T
A
= +25°C
V
DG
and V
DS
2N3821
2N3822
2N3823
2N3821UB 2N3822UB 2N3823UB
V dc
50
V dc
50
V dc
30
2N3821
2N3821UB
V dc
50
V
GSR
2N3822
2N3822UB
V dc
50
2N3823
2N3823UB
V dc
30
I
GF
T
op
and T
STG
°C
-55 to +200
mW
300
mA dc
10
(1) Derate linearly, 1.7 mW/°C for T
A
≥
+25°C.
* 1.4 Primary electrical characteristics.
I
DSS
(1)
V
DS
= 15 V dc
V
GS
= 0
V
GS(off)
V
DS
= 15 V dc
I
D
= 0.5 nA dc
V
DS
= 15 V dc
V
GS
= 0,
R
G
= 1 MΩ
f = 10 Hz
2N3823
2N3823UB
2N3821
2N3822
2N3821UB 2N3822UB
N
F
V
DS
= 15 V V
DS
= 15 V
dc
dc
V
GS
= 0,
V
GS
= 0,
R
G
= 1 MΩ R
G
= 1 MΩ
f = 1 kHz f = 105 MHz
All
types
2N3823
2N3823UB
2N3821
2N3822
2N3823
2N3821UB 2N3822UB 2N3823UB
2N3821
2N3821UB
2N3822
2N3822UB
mA dc
Min
Max
0.5
2.5
mA dc
2.0
10.0
mA dc
4.0
20.0
V dc
V dc
V dc
dB
dB
dB
4.0
6.0
8.0
5.0
2.5
2.5
(1) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/375F
* 1.4 Primary electrical characteristics - Continued.
|y
fs
|1 (1)
V
DS
= 15 V dc
f = 1 kHz
V
GS
= 0
2N3821
2N3821UB
2N3822
2N3822UB
2N3823
2N3823UB
|y
fs
|3
V
DS
= 15 V dc
V
GS
= 0
f = 100
f = 100
f = 200
MHz
MHz
MHz
2N3821
2N3821UB
2N3822
2N3822UB
2N3823
2N3823UB
C
iss
V
DS
= 15 V
dc
V
GS
= 0
100 kHz
≤
f
≤
1 MHz
C
rss
V
DS
= 15 V dc
V
GS
= 0
100 kHz
≤
f
≤
1 MHz
2N3821
2N3821UB
2N3822
2N3822UB
2N3823
2N3823UB
µs
Min
Max
1,500
4,500
µs
3,000
6,500
µs
3,500
6,500
µs
1,500
µs
3,000
µs
3,200
pF
pF
pF
pF
6
3
3
2
(1) Pulsed (see 4.5.1).
2 APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/375F
Ltr
Inches
Min
CD
CH
HD
L1
L2
LC
LD
LL
LU
Q
r
TL
TW
α
.028
.036
.250
.100 TP
.016
.500
.016
.178
.170
.209
Dimensions
Millimeters
Min
4.52
4.32
5.31
Max
4.95
5.33
5.84
1.27
6.35
2.54 TP
0.41
12.70
0.41
0.53
19.05
0.48
1.02
0.18
0.71
0.91
45° TP
1.22
1.17
Notes
TO-72
Max
.195
.210
.230
.050
.021
.750
.019
.040
.007
.048
.046
2, 6
6
3, 6
8
NOTES:
1. Dimensions are in inches. Metric equivalents are given for general information only.
2. Measured in the zone beyond .250 (6.35 mm) from the seating plane.
3. Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane.
4. When measured in a gauging plane .054 +.001, -.000 (1.37 +.3, -.00 mm) before the seating plane of
the transistor, maximum diameter leads shall be within .007 (.18 mm) of their true location relative
to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter
lead tolerance.
5. The active elements are electrically insulated from the case.
6. All 4 leads.
7. Lead 1 is the source, lead 2 is the drain, lead 3 is the gate, and lead 4 is the case.
8. Symbol TL is measured from HD maximum.
9. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 1. Physical dimensions (similar to T0-72).
3
MIL-PRF-19500/375F
UB
Dimensions
Symbol
BH
BL
BW
CL
CW
LL1
LL2
LS1
LS2
LW
r
r1
r2
Min
.046
.115
.085
Inches
Max
.056
.128
.108
.128
.108
.038
.035
.040
.079
.024
.008
.012
.022
Millimeters
Min
Max
0.97
1.42
2.82
3.25
2.41
2.74
3.25
2.74
0.56
0.96
0.43
0.89
0.91
1.02
1.81
2.01
0.41
0.61
.203
.305
.559
Note
.022
.017
.036
.071
.016
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Hatched areas on package denote metallized areas (tungsten with gold plating 60 micro inches min over 80
micro inches min nickel.
4. Lid material: Kovar; Lid finish: Gold plating 50 micro inches min thick over 80 micro inches nickel.
5. Pad 1 = Source, Pad 2 = Drain, Pad 3 = Gate, Pad 4 = Shielding connected to the lid.
* FIGURE 2. Physical dimensions, surface mount (2N3821UB, 2N3822UB, AND 2N3823UB).
4
MIL-PRF-19500/375F
3. REQUIREMENTS
*
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
R
ISO
................... Insulation resistance, gate lead to case.
V
1
...................... rms value of the specified reference voltage in the specified circuit.
V
2
...................... rms value of the measured voltage between the specified points in the specified circuit.
|y
os
| .................... Magnitude of small-signal common-source short-circuit output admittance.
S ........................ Unit of conductance or admittance (formerly mho).
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 and figure 2 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in paragraph 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table 1.
* 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on
the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo.
The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N"
prefix and the "UB" suffix can also be omitted.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4 VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
* 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
in 4.4.1 and 4.4.2 herein.
5
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
