MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9085/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
•
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF9085
MRF9085R3
MRF9085SR3
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780)
MRF9085
CASE 465A–06, STYLE 1
NI–780S
MRF9085SR3, MRF9085LSR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
=
25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
250
1.43
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF9085
MRF9085SR3/MRF9085LSR3
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.7
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
(1) Part is internally input matched.
C
oss
C
rss
—
—
73
2.9
—
—
pF
pF
(continued)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.0
—
—
—
—
3.7
0.19
8.0
4.0
—
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued
(T
C
= 25°C unless otherwise noted)
Characteristic
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Power Output, 1 dB Compression Point, CW
(V
DD
= 26 Vdc, I
DQ
= 700 mA,
f1 = 880.0 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 700 mA,
f1 = 880.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 700 mA,
f1 = 880.0 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 700 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Power Output, 1 dB Compression Point, CW (1)
(V
DD
= 26 Vdc, I
DQ
= 700 mA,
f1 = 960 MHz)
G
ps
17
17.9
—
dB
Symbol
Min
Typ
Max
Unit
η
36
40
—
%
IMD
—
–31
–28
dBc
IRL
—
–21
–9
dB
G
ps
—
17.9
—
dB
η
—
40.0
—
%
IMD
—
–31
—
dBc
IRL
—
–16
—
dB
P
1dB
—
105
—
W
G
ps
—
17.5
—
dB
η
—
51
—
%
Ψ
No Degradation In Output Power
P
1dB
—
105
—
W
(1) These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2.
MOTOROLA RF DEVICE DATA
MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3
3
V
GG
+
+
C7
B1
B2
B3
+
+
C18
+
C19
V
DD
+
C17
C8
C9
L1
L2
C16
C11
RF
INPUT
C6
Z1
C1
C4
C3
C5
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C10
DUT
Z11
Z12 Z13 Z14
Z15
Z16
Z17 Z18
Z19
C15
C14
Z20
RF
OUTPUT
C12
C13
B1, B2, B3
C1, C9, C15, C16
C3
C4, C13
C5, C6, C12
C7, C17, C18, C19
C8
C10, C11
C14
L1
L2
N1, N2
WB1, WB2
Z1
Z2
Z3
Z4
Z5
Short Ferrite Beads, Surface Mount
47 pF Chip Capacitors, B Case , ATC
5.6 pF Chip Capacitor, B Case, ATC
0.8 – 8.0 Variable Capacitors, Gigatrim
8.2 pF Chip Capacitors, B Case, ATC
10
mF,
35 V Tantalum Surface Mount Capacitors, Kemet
20 K pF Chip Capacitor, B Case, ATC
16 pF Chip Capacitors, B Case, ATC
0.6 – 4.5 Variable Capacitor, Gigatrim
7.15 nH Inductor, Coilcraft
17.5 nH Inductor, Coilcraft
N–Type Panel Mount, Stripline, M/A–Com
5 Mil BeCu Shim (0.225 x 0.525)
0.219″ x 0.080″ Microstrip
0.150″ x 0.080″ Microstrip
0.851″ x 0.080″ Microstrip
0.125″ x 0.220″ Microstrip
0.123″ x 0.220″ Microstrip
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
PCB
0.076″ x 0.220″ Microstrip
0.261″ x 0.220″ Microstrip
0.220″ x 0.630″ x 0.200″ Taper
0.240″ x 0.630″ Microstrip
0.060″ x 0.630″ Microstrip
0.067″ x 0.630″ Microstrip
0.233″ x 0.630″ Microstrip
0.630″ x 0.220″ x 0.200″ Taper
0.200″ x 0.220″ Microstrip
0.055″ x 0.220″ Microstrip
0.088″ x 0.220″ Microstrip
0.226″ x 0.220″ Microstrip
0.868″ x 0.080″ Microstrip
0.129″ x 0.080″ Microstrip
0.223″ x 0.080″ Microstrip
Arlon GX–0300–55–22, 30 mils
ε
r
= 2.55
Figure 1. 865–895 MHz Broadband Test Circuit Schematic
C7
VGG
B1
C8
B2
C6
C11
B3
C16
L2
WB1
WB2
C12
C17
V DD
C19
C1
C9
L1
C3
C4
C5
C18
C15
CUTOUT
C14
C10
C13
MRF9085
Figure 2. 865–895 MHz Broadband Test Circuit Component Layout
MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
ps
h
V
DD
= 26 Vdc
P
out
= 90 W (PEP)
I
DQ
= 700 mA
Two-Tone, 100 kHz Tone Spacing
IMD
VSWR
860
865
870
875
880
885
f, FREQUENCY (MHz)
890
895
900
45
40
35
-28
-30
-32
-34
-36
h
, DRAIN
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
2.00
1.75
1.50
1.25
1.00
VSWR
3rd Order
5th Order
19
18
G ps , POWER GAIN (dB)
17
16
15
14
13
12
11
50
Figure 3. Class AB Broadband Circuit Performance
h
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
G
ps
17
G ps , POWER GAIN (dB)
15
h
V
DD
= 26 Vdc
I
DQ
= 700 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
IMD
1
10
100
P
out
, OUTPUT POWER (WATTS) PEP
0
-20
-40
-60
40
20
IMD, INTERMODULATION DISTORTION (dBc)
19
60
-10
-20
-30
-40
V
DD
= 26 Vdc
I
DQ
= 700 mA
f1 = 800.0 MHz
f2 = 800.1 MHz
13
11
9
7
7th Order
-50
-60
-70
1
10
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain, Efficiency, IMD versus
Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
18
17
Gps, POWER GAIN (dB)
16
15
14
G
ps
60
50
h
, DRAIN EFFICIENCY (%)
40
30
V
DD
= 26 Vdc
I
DQ
= 700 mA
f = 880 MHz
Single Tone
10
100
P
out
, OUTPUT POWER (WATTS) CW AVG.
20
10
0
19
17
Gps, POWER GAIN (dB)
15
13
11
9
7
1
G
ps
h
40
h
, DRAIN EFFICIENCY (%) & ACPR (dB)
20
V
DD
= 26 Vdc
I
DQ
= 700 mA
f = 880 MHz
0
-20
-40
-60
-80
750 kHz
1.98 MHz
10
P
out
, OUTPUT POWER (WATTS) AVG.
13
12
1
h
Figure 6. Power Gain, Efficiency versus Output
Power
Figure 7. Power Gain, Efficiency, ACPR versus
Output Power
MOTOROLA RF DEVICE DATA
MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
