RF JFET Transistors X KU Band MESFET
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | CEL |
| 产品种类 Product Category | RF JFET Transistors |
| RoHS | N |
| Transistor Type | MESFET |
| 技术 Technology | GaAs |
| Gain | 10 dB |
| Vds - Drain-Source Breakdown Voltage | 15 V |
| Vgs - Gate-Source Breakdown Voltage | - 7 V |
| Id - Continuous Drain Current | 350 mA |
| 最大工作温度 Maximum Operating Temperature | + 175 C |
| Pd-功率耗散 Pd - Power Dissipation | 2.5 W |
| 安装风格 Mounting Style | Screw |
| 封装 / 箱体 Package / Case | Outline75 |
| Operating Frequency | 14.5 GHz |
| 产品 Product | RF JFET |
| 类型 Type | GaAs MESFET |
| P1dB - Compression Point | 25 dBm |
| NE960R275 | NE94433-T1B-T44-A | NE960R575 | |
|---|---|---|---|
| 描述 | RF JFET Transistors X KU Band MESFET | RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor | MOSFET X KU Band MESFET |
| Product Attribute | Attribute Value | Attribute Value | Attribute Value |
| 制造商 Manufacturer |
CEL | CEL | CEL |
| 产品种类 Product Category |
RF JFET Transistors | RF Bipolar Transistors | MOSFET |
| RoHS | N | Details | N |
| 技术 Technology |
GaAs | Si | Si |
| Transistor Type | MESFET | Bipolar | - |
| Vds - Drain-Source Breakdown Voltage | 15 V | - | 15 V |
| Id - Continuous Drain Current | 350 mA | - | 600 mA |
| Pd-功率耗散 Pd - Power Dissipation |
2.5 W | - | 3 W |
| 安装风格 Mounting Style |
Screw | - | SMD/SMT |
| 封装 / 箱体 Package / Case |
Outline75 | - | Minimold-4 |
| 类型 Type |
GaAs MESFET | RF Bipolar Small Signal | - |
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