A Product Line of
Diodes Incorporated
ZVP1320F
200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23
Features and Benefits
•
•
•
•
•
•
V
(BR)DSS
> -200V
R
DS(on)
≤
80Ω @ V
GS
= -10V
Maximum continuous drain current I
D
= -35mA
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
SOT23
D
G
S
Top View
Device symbol
Pin-Out
Top View
Ordering Information
(Note 3)
Part Number
ZVP1320FTA
Notes:
Marking
MT
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MT = Product Type Marking Code
ZVP1320F
Document number: DS33391 Rev. 4 - 2
1 of 8
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZVP1320F
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 5)
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-200
±20
-35
-400
Unit
V
V
mA
mA
Thermal Characteristics
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θJA
T
J
,
T
STG
Value
350
357
-55 to +150
Unit
mW
°C/W
°C
Characteristic
(Note 4)
(Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
4. For a device mounted on 25mm X 25mm X 1.6mm FR-4 PCV with high coverage of single sided 1oz copper, in still air condition.
5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
ZVP1320F
Document number: DS33391 Rev. 4 - 2
2 of 8
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZVP1320F
Thermal Characteristics
ZVP1320F
Document number: DS33391 Rev. 4 - 2
3 of 8
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZVP1320F
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Source Leakage
On-State Drain Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
I
D(on)
V
GS(th)
R
DS (on)
g
fs
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Min
-200
-
-
-100
-1.5
-
25
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-1
-20
±20
-
-3.5
80
-
50
15
5
8
8
8
16
Unit
V
µA
nA
mA
V
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -1mA
V
DS
= -200V, V
GS
= 0V
V
DS
= -160V, V
GS
= 0V, T
A
= 125°C
V
GS
= ±20V, V
DS
= 0V
V
GS
= -10V, V
DS
= -15V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -10V, I
D
= -50mA
V
DS
= -15V, I
D
= -50mA
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= -25V, I
D
= -50mA
6. Short duration pulse test used to minimize self-heating effect.
ZVP1320F
Document number: DS33391 Rev. 4 - 2
4 of 8
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZVP1320F
Electrical Characteristics
ZVP1320F
Document number: DS33391 Rev. 4 - 2
5 of 8
www.diodes.com
January 2012
© Diodes Incorporated
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
