AP3989I-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
0.68Ω
10A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
+30
10
5
40
39
50
10
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
℃
℃
Total Power Dissipation
Single Pulse Avalanche Energy
2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.2
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
201012012
AP3989I-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=480V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=9A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=9A
R
G
=10Ω,V
GS
=10V
R
D
=33.3Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
4.5
-
-
48
10
20
16
25
70
35
355
28
Max. Units
-
0.68
4
-
100
+100
77
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
o
2150 3440
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
3
Reverse Recovery Time
3
Reverse Recovery Charge
Test Conditions
I
S
=9A, V
GS
=0V
I
S
=9A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
570
9.7
Max. Units
1.5
-
-
V
ns
uC
Notes:
1.Pulse width limited by Max junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3989I-HF
20
10
T
C
=25 C
16
o
I
D
, Drain Current (A)
10 V
7.0 V
6.0 V
I
D
, Drain Current (A)
T
C
=150 C
8
o
10V
7.0 V
6.0 V
5.0V
12
6
8
5.0V
4
V
G
= 4.0V
2
4
V
G
= 4 . 0V
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I
D
=5A
V
G
=10V
Normalized BV
DSS
(V)
1.1
2.0
Normalized R
DS(ON)
1
1.6
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.3
T
j
=150
o
C
6
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.1
I
S
(A)
4
0.9
2
0.7
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3989I-HF
12
3000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
=9A
V
DS
=480V
8
2000
C
iss
6
C (pF)
1000
4
2
C
oss
C
rss
0
0
10
20
30
40
50
60
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
100
Normalized Thermal Response (R
thjc
)
0.2
10
Operation in this
area limited by
R
DS(ON)
0.1
0.1
100us
1ms
10ms
100ms
I
D
(A)
0.05
0.02
1
0.01
P
DM
0.01
t
T
Single Pulse
0
T
C
=25
o
C
Single Pulse
0
1
10
100
1s
DC
1000
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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