Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-lay-
er board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER
Operating Voltage Range
Shutdown Supply Current
(I
SENSE IN
+ I
SENSE OUT
+ I
OV
+
I
SHDN
+ I
VCC
)
SYMBOL
V
CC
(V
CC
= 14V, C
GATE1
= 32nF, C
GATE2
= 32nF,
SHDN
= high, T
A
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= +25NC.) (Note 2)
CONDITIONS
(Note 3)
T
A
= +25NC
I
SHDN
SHDN
= low,
V
SENSE OUT
= 0V,
V
TERM
= 0V
T
A
= +85NC (Note
3)
T
A
= +125NC
(Note 3)
T
A
= +25NC
Quiescent Supply Current
(I
SENSE IN
+ I
SENSE OUT
+ I
OV
+
I
SHDN
+ I
VCC
)
V
CC
Undervoltage Lockout
V
CC
Undervoltage-Lockout
Hysteresis
SET Threshold Voltage
SET Threshold Voltage
Hysteresis
SET Input Current
SHDN
Low Threshold
SHDN
High Threshold
SHDN
Pulldown Current
V
CC
to GATE Output Low
Voltage
V
CC
to GATE Clamp Voltage
V
SETTH
V
SETHY
I
SET
V
SHDNL
V
SHDNH
I
SHDN
V
GVCC1
V
GVCC2
V
SHDN
= 14V, internally pulled to GND
V
CC
= 14V
V
CC
= 42V
6.25
1.4
0.5
7.5
1.0
8.5
14
V
SET
= 1V
V
SET
rising
-3%
I
Q
SHDN
= high
T
A
= +85NC (Note
3)
T
A
= +125NC
(Note 3)
V
UVLO
V
CC
rising, V
SET
= 1V ,
SHDN
= high
MIN
4.5
6.0
6.1
6.2
29
30
31
4.06
8
+1.20
4
0.02
0.2
0.4
+3%
TYP
MAX
19
12
12
12
53
55
57
4.35
V
%
V
%
FA
V
V
FA
V
V
FA
FA
UNITS
V
2
Maxim Integrated
MAX16914/MAX16915
Ideal Diode, Reverse-Battery, and Overvoltage Protection
Switch/Limiter Controllers with External MOSFETs
ELECTRICAL CHARACTERISTICS (continued)
PARAMETER
TERM On-Resistance
TERM Output Current
Back-Charge Voltage Fault
Threshold
Back-Charge Voltage Threshold
Hysteresis
Back-Charge Turn-Off Time
(GATE1)
Back-Charge Recovery Time
(GATE1)
GATE2 Turn-Off Time
GATE2 Turn-On Time
Startup Response Time
(V
SHDN
Rising)
Startup Response Time
(V
CC
Rising)
Reverse-Battery Voltage Turn-Off
Time/UVLO Turn-Off Time
Thermal-Shutdown Temperature
Thermal-Shutdown Hysteresis
OV
Output Low Voltage
OV
Open-Drain Leakage Current
SENSE IN Input Current
SENSE OUT Input Current
SET to
OV
Output Low
Propagation Delay
V
OVBL
I
OVB
I
SENSE IN
I
SENSE OUT
t
OVBPD
I
SINK
= 600FA
V
SET
= 1.0V
V
SHDN
= 0/14V
V
SHDN
= 0/14V
V
CC
= 9.5V, V
SET
rising from 1V to
1.5V to V
OV
falling
1
2
3
t
START1
t
START2
t
REVERSE
SYMBOL
R
TERM
I
TERM
V
BCTH
V
BCHY
(V
CC
= 14V, C
GATE1
= 32nF, C
GATE2
= 32nF,
SHDN
= high, T
A
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= +25NC.) (Note 2)
CONDITIONS
SHDN
= high
SHDN
= low, V
TERM
= 0V
V
SENSE OUT
= 14V (Note 4)
V
SENSE OUT
= 14V
V
CC
= 9.5V, V
SENSE IN
= 9V,
V
SENSE OUT
stepped from 4.9V to 9.5V
(Note 5)
V
CC
= 9.5V, V
SENSE IN
= 9V,
V
SENSE OUT
stepped from 9.5V to 4.9V
(Note 6)
V
CC
= 9.5V, V
SET
rising from 1V to
1.5V (Note 7)
V
CC
= 9.5V, V
SET
falling from 1.5V to
1V (Note 8)
V
CC
= 9.5V, from V
SHDN
rising to
V
GATE_
falling (Note 9)
V
CC
rising from 2V to 4.5V,
SHDN
=
high (Note 10)
V
CC
and V
SENSE IN
falling from 4.25V
to 3.25V, V
SENSE OUT
= 4.25V
(Note 11)
18
25
50
MIN
TYP
150
MAX
500
1.0
32
UNITS
I
FA
mV
mV
t
BC
6
10
Fs
t
BCREC
18
30
Fs
3
20
100
0.150
30
+170
20
0.4
1.0
5
5
Fs
Fs
Fs
ms
Fs
NC
NC
V
FA
FA
FA
Fs
Note 2:
All parameters are production tested at T
A
= +25NC. Limits over the operating temperature range are guaranteed by
design and characterization.
Note 3:
Guaranteed by design and characterization.
Note 4:
The back-charge voltage, V
BC
, is defined as the voltage at SENSE OUT minus the voltage at SENSE IN.
Note 5:
Defined as the time from when V
BC
exceeds V
BCTH
(25mV typ) to when V
GATE1
exceeds V
CC
- 3.5V.
Note 6:
Defined as the time from when V
BC
falls below V
BCTH
- 50mV to when V
GATE1
falls below V
CC
- 3.5V.
Note 7:
Defined as the time from when V
SET
exceeds V
SETTH
(1.20V typ) to when V
GATE2
exceeds V
CC
- 3.5V.
Note 8:
Defined as the time from when V
SET
falls below V
SETTH
- 5% (1.14V typ) to when V
GATE2
falls below V
CC
- 3.5V.
Note 9:
The external pFETs can turn on t
START
after the IC is powered up and all input conditions are valid.
Note 10:
Defined as the time from when V
CC
exceeds the undervoltage-lockout threshold (4.3V max) to when V
GATE1
and V
GATE2
fall below 1V.
Note 11:
Defined as the time from when V
CC
falls below V
SENSE OUT
- 25mV to when V
GATE1
reaches V
CC
- 1.75V.
Maxim Integrated
3
MAX16914/MAX16915
Ideal Diode, Reverse-Battery, and Overvoltage Protection
Switch/Limiter Controllers with External MOSFETs
Typical Operating Characteristics
(V
CC
= 14V, V
SHDN
= 14V, MAX16914/MAX16915 Evaluation Kit, T
A
= +25NC, unless otherwise noted.)
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
MAX16914 toc01
SUPPLY CURRENT
vs. TEMPERATURE
MAX16914 toc02
SHUTDOWN SUPPLY CURRENT
vs. SUPPLY VOLTAGE
MAX16914 toc03
30
MAX16914
25
MAX16915
20
40
35
SUPPLY CURRENT (FA)
30
25
MAX16915
20
15
10
TERM = OPEN
SHDN = HIGH
SET = 0V, V
CC
= 14V
NO LOAD
-40
-15
10
35
60
85
TEMPERATURE (NC)
MAX16914
10
8
SUPPLY CURRENT (FA)
6
4
MAX16915
2
0
4.5
SHDN = LOW
SET = 0V
7.0
9.5
12.0
14.5
SUPPLY VOLTAGE (V)
MAX16914
SUPPLY CURRENT (µA)
15
10
4.5
TERM = OPEN
SHDN = HIGH
SET = 0V
NO LOAD
7.0
9.5
12.0
14.5
17.0 19.0
110 125
17.0 19.0
SUPPLY VOLTAGE (V)
UVLO THRESHOLD
vs. TEMPERATURE
MAX16914 toc04
SET THRESHOLD
vs. TEMPERATURE
MAX16914 toc05
POWER-UP RESPONSE
MAX16914 toc06
4.3
4.2
UVLO TRESHOLD (V)
4.1
4.0
3.9
3.8
3.7
3.6
3.5
-40
-15
10
35
60
85
TEMPERATURE (NC)
110
FALLING
RISING
1.25
RISING
SET THRESHOLD (V)
1.20
V
CC
10V/div
V
OUT
10V/div
1.15
V
GATE1
10V/div
FALLING
1.10
125
-40
-15
10
35
60
85
TEMPERATURE (NC)
110
125
40µs/div
22µF INPUT AND OUTPUT CAPACITOR,
R
OUT
= 100I, SHDN = HIGH
V
GATE2
10V/div
STARTUP FROM
SHUTDOWN RESPONSE
MAX16914 toc07
OVERVOLTAGE LIMITER RESPONSE
(MAX16915)
MAX16914 toc08
OVERVOLTAGE SWITCH-OFF
RESPONSE (MAX16914)
MAX16914 toc09
V
SHDN 30V
2V/div
14V
V
CC
20V/div
30V
14V
V
CC
10V/div
V
OUT
10V/div
14V
14V
V
OUT
20V/div
20V
14V
V
OUT
10V/div
14V
0V
14V
0V
V
GATE1
10V/div
V
OV
20V/div
0V
14V
V
OV
20V/div
V
GATE2
10V/div
0V
V
GATE2
20V/div
30V
0V
V
GATE2
20V/div
20µs/div
100µF INPUT CAPACITOR, 122µF
OUTPUT CAPACITOR, R
OUT
= 100I
V
CC
= 14V TO 30V
TRIP THRESHOLD = 22V
100µF INPUT CAPACITOR, 22µF
OUTPUT CAPACITOR, R
OUT
= 100I
C
OV
= 10nF
400µs/div
1.0µs/div
V
CC
= 14V TO 30V
TRIP THRESHOLD = 22V
100µF INPUT CAPACITOR, 22µF
OUTPUT CAPACITOR, R
OUT
= 100I
4
Maxim Integrated
MAX16914/MAX16915
Ideal Diode, Reverse-Battery, and Overvoltage Protection
Switch/Limiter Controllers with External MOSFETs
Typical Operating Characteristics (continued)
(V
CC
= 14V, V
SHDN
= 14V, MAX16914/MAX16915 Evaluation Kit, T
A
= +25NC, unless otherwise noted.)
BACK-CHARGE RESPONSE
MAX16914 toc10
V
CC
- V
GATE_
vs. INPUT VOLTAGE
MAX16914 toc11
GATE-DRIVE VOLTAGE
vs. TEMPERATURE
MAX16914 toc12
15.0
13.5
GATE DRIVE VOLTAGE (V)
V
CC
12.0
10.5
9.0
7.5
6.0
4.5
3.0
1.5
0
SET = GND
SHDN = HIGH
GATE2
GATE1
6.6
GATE-DRIVE VOLTAGE (V)
5V
5V/div
6.5
GATE1
V
OUT
5V/div
5V
6.4
GATE2
6.3
V
CC
= 14V
SET = GND
SHDN = HIGH
-40
-15
10
35
60
85
TEMPERATURE (NC)
110
125
V
GATE1
5V/div
0V
1.0µs/div
2.2µF INPUT CAPACITOR, 400I
INPUT RESISTOR, 22µF OUTPUT CAPACITOR
6.2
4.5 9.0 13.5 18.0 22.5 27.0 31.5 36.0 40.5 44.0
SUPPLY VOLTAGE (V)
Pin Description
PIN
1
2
3
NAME
V
CC
GATE1
SENSE IN
FUNCTION
Positive Supply Input Voltage. Bypass V
CC
to GND with a 0.1FF or greater ceramic capacitor.
Gate-Driver Output. Connect GATE1 to the gate of an external p-channel FET pass switch to pro-
vide low drain-to-source voltage drop, reverse voltage protection, and back-charge prevention.
Differential Voltage Sense Input (Input Side of IC). Used with SENSE OUT to provide back-charge
prevention when the SENSE IN voltage falls below the SENSE OUT voltage by 25mV.
Active-Low Shutdown/Wake Input. Drive
SHDN
high to turn on the voltage detectors. GATE2 is
shorted to V
CC
when
SHDN
is low.
SHDN
is internally pulled to GND through a 0.5FA current sink.
Connect
SHDN
to V
CC
for always-on operation.
Open-Drain Overvoltage Indicator Output. Connect a pullup resistor from
OV
to a positive supply
such as V
CC
.
OV
is pulled low when the voltage at SET exceeds the internal threshold.
Ground
Controller Overvoltage Threshold Programming Input. Connect SET to the center of an external
resistive divider network between TERM and GND to adjust the desired overvoltage switch-off or
limiter threshold.
Voltage-Divider Termination Output. TERM is internally connected to SENSE OUT in the MAX16915
and to V
CC
in the MAX16914. TERM is high impedance when
SHDN
is low, forcing the current to
zero in the resistor-divider connected to TERM.
Differential Voltage Sense Input (Output Side Of IC). Used with SENSE IN to provide back-charge
prevention when the SENSE IN voltage falls below the SENSE OUT voltage by 25mV.
Gate-Driver Output. Connect GATE2 to the gate of an external p-channel FET pass switch. GATE2
is driven low during normal operation and quickly regulated or shorted to V
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