Freescale Semiconductor
Technical Data
Document Number: MRF8S9170N
Rev. 1, 5/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1000 mA, P
out
= 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
19.3
19.1
18.9
η
D
(%)
36.5
36.1
36.0
Output PAR
(dB)
6.0
6.1
6.0
ACPR
(dBc)
--36.6
--36.7
--36.1
MRF8S9170NR3
920-
-960 MHz, 50 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Typical P
out
@ 1 dB Compression Point
≃
177 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CASE 2021-
-03, STYLE 1
OM-
-780-
-2
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78°C, 50 W CW, 28 Vdc, I
DQ
= 1000 mA
Case Temperature 82°C, 170 W CW, 28 Vdc, I
DQ
= 1000 mA
Symbol
R
θJC
Value
(2,3)
0.38
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MRF8S9170NR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 355
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1000 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.9 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.3
0.1
2.3
3.1
0.19
3
3.8
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 50 W Avg., f = 920 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
18.0
34.0
5.5
—
—
19.3
36.5
6.0
--36.6
--10
21.0
—
—
--34.5
--7
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 50 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
1. Part internally matched both on input and output.
G
ps
(dB)
19.3
19.1
18.9
η
D
(%)
36.5
36.1
36.0
Output PAR
(dB)
6.0
6.1
6.0
ACPR
(dBc)
--36.6
--36.7
--36.1
IRL
(dB)
--10
--12
--16
(continued)
MRF8S9170NR3
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 160 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 50 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
177
17
Max
—
—
Unit
W
MHz
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, 920--960 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
50
0.32
0.01
0.01
—
—
—
—
MHz
dB
dB/°C
dBm/°C
MRF8S9170NR3
RF Device Data
Freescale Semiconductor
3
B1
C28
C6
C7
R1
C8
C5
C18
C20 C22
C24 C26
C4
C1*
R2
C9
C12 C14
CUT OUT AREA
C11 C13
C15
C10
C17*
C2
C3
C16
C19
C21 C23
C25 C27
MRF8S9170N
Rev. 0
*C1 and C17 are mounted vertically.
Figure 1. MRF8S9170NR3 Test Circuit Component Layout
Table 6. MRF8S9170NR3 Test Circuit Component Designations and Values
Part
B1
C1, C8, C17, C18, C19,
C20, C21
C2
C3, C4
C5
C6
C7, C22, C23
C9, C10
C11, C12
C13, C14
C15
C16
C24, C25, C26, C27
C28
R1
R2
PCB
Description
Short Ferrite Bead
39 pF Chip Capacitors
2.0 pF Chip Capacitor
3.3 pF Chip Capacitors
100
μF,
50 V Electrolytic Capacitor
3.3.
μF,
100 V Chip Capacitor
0.1
μF
Chip Capacitors
6.8 pF Chip Capacitors
6.2 pF Chip Capacitors
5.6 pF Chip Capacitors
4.7 pF Chip Capacitor
2.2 pF Chip Capacitor
22
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitor
2 KΩ, 1/4 W Chip Resistor
5.1
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 3.5
Part Number
2743019447
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RF--35
ATC
ATC
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Illinois Cap
TDK
TDK
ATC
ATC
ATC
ATC
ATC
TDK
Chemi--Con
Vishay
Vishay
Taconic
Manufacturer
Fair--Rite
MRF8S9170NR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
V
DD
= 28 Vdc, P
out
= 50 W (Avg.), I
DQ
= 1000 mA
Single--Carrier W--CDMA, 3.85 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
G
ps
PARC
IRL
ACPR
840
860
880
900
920
940
960
f, FREQUENCY (MHz)
η
D
, DRAIN
EFFICIENCY (%)
20
19.8
19.6
G
ps
, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
18.2
18
820
44
42
40
38
36
--27
ACPR (dBc)
--29
--31
--33
--35
--37
980
0
--5
--10
--15
--20
IRL, INPUT RETURN LOSS (dB)
--1.5
--2
--2.5
--3
--3.5
--4
PARC (dB)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 50 Watts Avg.
--5
--10
--15
--20
--25
--30
--35
--40
--45
--50
--55
--60
--65
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 160 W (PEP), I
DQ
= 1000 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM3--U
IM5--U
IM5--L
IM7--U
IM7--L
1
10
TWO--TONE SPACING (MHz)
100
IM3--L
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20
G
ps
, POWER GAIN (dB)
19
18
17
16
15
1
0
--1
--2 --1 dB = 40 W
--3
--4
--5
--2 dB = 58.4 W
PARC
--3 dB = 79.1 W
30
20
40
60
80
100
120
140
160
P
out
, OUTPUT POWER (WATTS)
η
D
G
ps
50
40
80
η
D
,
DRAIN EFFICIENCY (%)
ACPR
70
60
--15
--20
--25
--30
--35
--40
--45
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 1000 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
20
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S9170NR3
RF Device Data
Freescale Semiconductor
5
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