White Electronic Designs
WF512K32-XXX5
512Kx32 5V FLASH MODULE, SMD 5962-94612
FEATURES
Access Times of 60, 70, 90, 120, 150ns
Packaging
•
•
•
•
•
66 pin, PGA Type, 1.075" square, Hermetic
Ceramic HIP (Package 400
(1)
).
68 lead, 40mm, Low Capacitance Hermetic
CQFP (Package 501)
1
68 lead, 40mm, Low Profile 3.5mm (0.140"),
CQFP (Package 502)
1
68 lead, 22.4mm (0.880") Low Profile CQFP
(G2U) 3.5mm (0.140") high, (Package 510)
1
68 lead, 22.4mm (0.880") CQFP (G2L) 5.08mm
(0.200") high, Package (528)
Commercial, Industrial and Military Temperature
Ranges
5 Volt Programming. 5V ± 10% Supply.
Low Power CMOS, 6.5mA Standby
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Built-in Decoupling Caps for Low Noise Operation
Page Program Operation and Internal Program
Control Time
Weight
WF512K32 - XG2UX5 - 8 grams typical
WF512K32N - XH1X5 - 13 grams typical
WF512K32 - XG4TX5
1
- 20 grams typical
WF512K32-XG2LX5 - 8 grams typical
* This product is subject to change without notice.
Note 1: Package Not Recommended for New Design
See Flash Programming Application Note 4M5 for algorithms.
1,000,000 Erase/Program Cycles Minimum
Sector Architecture
•
•
8 equal size sectors of 64KBytes each
Any combination of sectors can be concurrently
erased. Also supports full chip erase
Organized as 512Kx32
FIGURE 1 – PIN CONFIGURATION FOR WF512K32N-XH1X5
Top View
1
I/O
8
I/O
9
I/O
10
A
14
A
16
A
11
A
0
A
18
I/O
0
I/O
1
I/O
2
11
22
12
WE
2
#
CS
2
#
GND
I/O
11
A
10
A
9
A
15
V
CC
CS
1
#
NC
I/O
3
33
23
I/O
15
I/O
14
I/O
13
I/O
12
OE#
A
17
WE
1
#
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
7
A
12
NC
A
13
A
8
I/O
16
I/O
17
I/O
18
44
34
V
CC
CS
4
#
WE
4
#
I/O
27
A
4
A
5
A
6
WE
3
#
CS
3
#
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
I/O
28
A
1
A
2
A
3
WE
1
# CS
1
#
Pin Description
56
I/O
0-31
A
0-18
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Block Diagram
WE
2
# CS
2
#
WE
3
# CS
3
#
WE
4
# CS
4
#
I/O
23
I/O
22
I/O
21
OE#
A
0-18
512K x 8
512K x 8
512K x 8
512K x 8
8
8
8
8
I/O
20
66
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
March 2006
Rev. 11
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WF512K32-XXX5
FIGURE 2 – PIN CONFIGURATION FOR WF512K32-XG4TX5
1
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
1
#
GND
CS
3
#
WE#
A
6
A
7
A
8
A
9
A
10
V
CC
Pin Description
I/O
0-31
A
0-18
WE#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
Block Diagram
CS
1
#
WE#
OE#
A
0-18
CS
2
#
CS
3
#
CS
4
#
512K X 8
512K X 8
512K X 8
512K X 8
CS
2
#
OE#
CS
4
#
V
CC
A
12
A
13
A
14
A
15
A
16
A
17
A
18
A
11
NC
NC
NC
NC
NC
8
8
8
8
Note 1: Package not recommended for new designs
I/O
0 - 7
I/O
8 - 15
I/O
16 - 23
I/O
24 - 31
FIGURE 3 – PIN CONFIGURATION FOR WF512K32-XG2UX5 AND WF512K32-XG2LX5
Top View
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
#
GND
CS
4
#
WE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
Pin Description
I/O
0-31
A
0-18
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
#
OE#
CS
2
#
A
17
WE
2
#
WE
3
#
WE
4
#
A
18
NC
NC
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
Block Diagram
WE
1
# CS
1
#
WE
2
# CS
2
#
WE
3
# CS
3
#
WE
4
# CS
4
#
OE#
A
0-18
512K x 8
512K x 8
512K x 8
512K x 8
8
8
8
8
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
March 2006
Rev. 11
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
Absolute Maximum Ratings (1)
Parameter
Unit
WF512K32-XXX5
CAPACITANCE
T
A
= +25°C
Parameter
OE# capacitance
WE
1-4
# capacitance
HIP (PGA)
CQFP G4T
CQFP G2U/G2L
CS
1-4
# capacitance
Data# I/O capacitance
Address input capacitance
Symbol
Conditions
C
OE
V
IN
= 0V, f = 1.0 MHz
C
WE
V
IN
= 0V, f = 1.0 MHz
Max Unit
50 pF
pF
20
50
15
V
IN
= 0V, f = 1.0 MHz 20 pF
V
I/O
= 0V, f = 1.0 MHz 20 pF
V
IN
= 0V, f = 1.0 MHz 50 pF
Operating Temperature
Supply Voltage Range (V
CC
)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention (Mil Temp)
Endurance - write/erase cycles (Mil Temp)
A9 Voltage for sector protect (V
ID
) (3)
-55 to +125
°C
-2.0 to +7.0
V
-2.0 to +7.0
V
-65 to +150
°C
+300
°C
20 years
1,000,000 cycles min.
-2.0 to +14.0
V
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,inputs
may overshoot Vss to -2.0 V for periods of up to 20ns. Maximum DC voltage on
output and I/O pins is Vcc + 0.5V. During voltage transitions, outputs may overshoot
to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is
+13.5V which may overshoot to 14.0 V for periods up to 20ns.
C
CS
C
I/O
C
AD
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A
9
Voltage for Sector Protect
Symbol
V
CC
V
IH
V
IL
T
A
T
A
V
ID
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
V
CC
+ 0.5
+0.8
+125
+85
12.5
Unit
V
V
V
°C
°C
V
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
V
CC
Static Current
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Sym
I
LI
I
LOx32
I
CC1
I
CC2
I
CC4
I
CC3
V
OL
V
OH1
V
LKO
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
V
CC
= 5.5, CS = V
IH
, f = 5MHz
V
CC
= 5.5, CS = V
IH
I
OL
= 8.0mA, V
CC
= 4.5
I
OH
= 2.5mA, V
CC
= 4.5
Min
Max
10
10
190
240
6.5
0.6
0.45
Units
μA
μA
mA
mA
mA
mA
V
V
0.85
X
V
CC
3.2
4.2
V
DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component
(at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
March 2006
Rev. 11
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 8sec.
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
0
11
64
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
Min
60
0
40
0
40
0
40
20
300
15
0
11
64
-60
Max
Min
70
0
45
0
45
0
45
20
300
15
0
11
64
-70
Max
Min
90
0
45
0
45
0
45
20
300
15
-90
Max
WF512K32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
Min
120
0
50
0
50
0
50
20
300
15
0
11
64
0
11
64
-120
Max
Min
150
0
50
0
50
0
50
20
300
15
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
ns
sec
sec
FIGURE. 4 – AC TEST CIRCUIT
AC Test Conditions
I
OL
Current Source
D.U.T.
C
eff
= 50 pf
V
Z
1.5V
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
(Bipolar Supply)
I
OH
Current Source
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
March 2006
Rev. 11
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
VCC Set-up Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (4)
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 8sec.
4. For Toggle and Data Polling.
t
OES
t
OEH
0
10
64
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
VCS
0
50
11
0
10
64
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
Min
60
0
40
0
40
0
40
20
300
15
0
50
11
0
10
64
-60
Max
Min
70
0
45
0
45
0
45
20
300
15
0
50
11
-70
Max
Min
90
0
45
0
45
0
45
20
300
15
-90
Max
WF512K32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,WE# CONTROLLED
Min
120
0
50
0
50
0
50
20
300
15
0
50
11
0
10
64
0
10
64
0
50
11
-120
Max
Min
150
0
50
0
50
0
50
20
300
15
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
ns
μs
sec
ns
ns
sec
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,WE# CONTROLLED
V
CC
= 5.0V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Address, CS# or OE#
Change, whichever is First
1. Guaranteed by design, but not tested
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
0
Min
60
60
60
30
20
20
0
-60
Max
Min
70
70
70
35
20
20
0
-70
Max
Min
90
90
90
35
20
20
0
-90
Max
Min
120
120
120
50
30
30
0
-120
Max
Min
150
150
150
55
35
35
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
March 2006
Rev. 11
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
