NDD60N360U1
N-Channel Power MOSFET
600 V, 360 mW
Features
•
100% Avalanche Tested
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
Power Dissipation –
R
qJC
Pulsed Drain
Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
,
T
STG
I
S
EAS
V
ISO
dv/dt
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V
(BR)DSS
600 V
R
DS(ON)
MAX
360 mW @ 10 V
Symbol
V
DSS
V
GS
I
D
NDD
600
±25
11
6.9
114
44
−55
to
+150
13
64
−
15
260
Unit
V
V
A
N−Channel MOSFET
D (2)
W
A
°C
A
mJ
V
V/ns
°C
4
1 2
1
1
G (1)
S (3)
t
p
= 10
ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
D
= 3.5 A)
RMS Isolation Voltage (t = 0.3 sec.,
R.H.
≤
30%, T
A
= 25°C) (Figure 15)
Peak Diode Recovery (Note 1)
Lead Temperature for Soldering Leads
4
2
3
T
L
IPAK
CASE 369D
4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I
SD
≤
13 A, di/dt
≤
400 A/ms, V
DS peak
≤
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
(Note 3)
NDD60N360U1
(Note 2)
NDD60N360U1−1
(Note 2)
NDD60N360U1−35G
Symbol
R
qJC
R
qJA
Value
1.1
47
98
95
Unit
°C/W
°C/W
3
2
3
DPAK
CASE 369C
IPAK
CASE 369AD
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
©
Semiconductor Components Industries, LLC, 2014
January, 2014
−
Rev. 0
1
Publication Order Number:
NDD60N360U1/D
NDD60N360U1
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Static Drain-to-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance, energy
related (Note 6)
Effective output capacitance, time
related (Note 7)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Plateau Voltage
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
C
o(er)
C
o(tr)
Q
g
Q
gs
Q
gd
V
GP
R
g
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
rr
V
GS
= 0 V, V
DD
= 30 V
I
S
= 13 A, d
i
/d
t
= 100 A/ms
T
J
= 25°C
T
J
= 100°C
V
DD
= 300 V, I
D
= 13 A,
V
GS
= 10 V, R
G
= 0
W
V
DS
= 300 V, I
D
= 13 A, V
GS
= 10 V
V
GS
= 0 V, V
DS
= 0 to 480 V
I
D
= constant, V
GS
= 0 V,
V
DS
= 0 to 480 V
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
790
47
3.0
38.9
135
26
4.7
12.9
5.6
4.5
10
20
26
22
0.93
0.86
303
206
97
3.6
mC
ns
1.6
V
V
W
ns
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250
mA
Reference to 25°C, I
D
= 250
mA
V
GS
= 10 V, I
D
= 5.5 A
V
DS
= 15 V, I
D
= 5.5 A
2
3.2
8.6
320
10
360
4
V
mV/°C
mW
S
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C, I
D
= 1 mA
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±25
V
T
J
= 25°C
T
J
= 125°C
600
560
1
100
±100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
RESISTIVE SWITCHING CHARACTERISTICS
(Note 5)
SOURCE−DRAIN DIODE CHARACTERISTICS
I
S
= 13 A, V
GS
= 0 V
4. Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
6. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
7. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NDD60N360U1
MARKING DIAGRAMS
4
Drain
YWW
60N
360U1G
4
Drain
YWW
60N
360U1G
4
Drain
YWW
60N
360U1G
1 2 3
Gate Drain Source
IPAK
Y
WW
G
= Year
= Work Week
= Pb−Free Package
2
1 Drain 3
Gate Source
DPAK
Package
IPAK
(Pb-Free, Halogen-Free)
IPAK
(Pb-Free, Halogen-Free)
DPAK
(Pb-Free, Halogen-Free)
Shipping
†
75 Units / Rail
75 Units / Rail
2500 / Tape & Reel
1 2 3
Gate Drain Source
IPAK
ORDERING INFORMATION
Device
NDD60N360U1−1G
NDD60N360U1−35G
NDD60N360U1T4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NDD60N360U1
TYPICAL CHARACTERISTICS
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
V
GS
= 10 V to 6.5 V
I
D
, DRAIN CURRENT (A)
V
GS
= 6.0 V
V
GS
= 5.5 V
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
T
J
=
−55°C
T
J
= 25°C
V
DS
= 15 V
I
D
, DRAIN CURRENT (A)
T
J
= 150°C
V
GS
= 5.0 V
V
GS
= 4.5 V
V
GS
= 4.0 V
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
T
J
= 25°C
I
D
= 5.5 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 10 V
4
5
6
7
8
9
10
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
I
D
, DRAIN CURRENT (A)
V
GS
, GATE VOLTAGE (V)
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.7
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
−50
I
D
= 5.5 A
V
GS
= 10 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.125
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
−50
−25
0
25
50
75
100
125
150
I
D
= 1 mA
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
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4
NDD60N360U1
TYPICAL CHARACTERISTICS
V
GS(th)
, NORMALIZED THRESHOLD VOLTAGE
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
−50
I
DSS
, LEAKAGE (nA)
I
D
= 250
mA
10,000
T
J
= 150°C
100,000
1000
T
J
= 125°C
100
T
J
= 100°C
−25
0
25
50
75
100
125
150
10
0
100
200
300
400
500
600
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Threshold Voltage Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10,000
C
OSS
C
ISS
C, CAPACITANCE (pF)
1000
C
RSS
100
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
14
12
10
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
Q
T
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
350
300
250
V
DS
8
6
4
2
0
0
4
8
12
16
Q
GS
Q
GD
V
DS
= 300 V
T
J
= 25°C
I
D
= 13 A
20
24
28
V
GS
200
150
100
50
0
10
1
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 9. Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
1000
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 10 V
V
DD
= 300 V
T
J
= 150°C
T
J
= 125°C
T
J
= 100°C
1
T
J
= 25°C
t, TIME (ns)
10
100
t
d(off)
t
f
t
r
10
t
d(on)
0.1
T
J
=
−55°C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1
0.1
1
10
100
R
G
, GATE RESISTANCE (W)
Figure 11. Diode Forward Voltage vs. Current
Figure 12. Resistive Switching Time Variation
vs. Gate Resistance
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