SMCJ
Transil™
Features
■
Peak pulse power:
– 1500 W (10/1000
μs)
– 10 kW (8/20
μs)
Stand off voltage range: from 5 V to 188 V
Unidirectional and bidirectional types
Low leakage current:
– 0.2
μA
at 25 °C
– 1
μA
at 85 °C
Operating T
j max
: 150 °C
High power capability at T
j max
:
– 1250 W (10/1000 µs)
JEDEC registered package outline
K
A
■
■
■
Unidirectional
Bidirectional
SMC
(JEDEC DO-214AB)
■
■
■
Description
The SMCJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 1500 W (10/1000
μs).
The Planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SMCJ are packaged in SMC (SMC footprint in
accordance with IPC 7531 standard).
Complies with the following standards
■
IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
IEC 61000-4-5
MIL STD 883G, method 3015-7 Class 3B
– 25 kV HBM (human body model)
Resin meets UL 94, V0
MIL-STD-750, method 2026 solderability
EIA STD RS-481 and IEC 60286-3 packing
IPC 7531 footprint
■
■
■
■
■
■
TM:
Transil is a trademark of STMicroelectroniocs
July 2010
Doc ID 5617 Rev 8
1/10
www.st.com
10
Characteristics
SMCJ
1
Table 1.
Symbol
P
PP
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
Peak pulse power dissipation
(1)
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
T
j
initial = T
amb
Value
1500
-65 to +150
-55 to +150
260
Unit
W
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Value
15
90
Unit
° C/W
° C/W
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
2/10
Doc ID 5617 Rev 8
SMCJ
Table 3.
Electrical characteristics - parameter values (T
amb
= 25 °C)
I
RM
max@V
RM
Order code
25 °C 85 °C
µA
SMCJ5.0A/CA
SMCJ6.0A/CA
SMCJ6.5A/CA
SMCJ8.5A/CA
SMCJ10A/CA
SMCJ12A/CA
SMCJ13A/CA
SMCJ15A/CA
SMCJ18A/CA
SMCJ20A/CA
SMCJ22A/CA
SMCJ24A/CA
SMCJ26A/CA
SMCJ28A/CA
SMCJ30A/CA
SMCJ33A/CA
SMCJ40A/CA
SMCJ48A/CA
SMCJ58A/CA
SMCJ70A/CA
SMCJ85A/CA
SMCJ100A/CA
SMCJ130A/CA
SMCJ154A/CA
SMCJ170A/CA
SMCJ188A/CA
V
V
BR
@I
R(1)
min typ
V
mA
V
CL
@I
PP
R
D (2)
V
CL
@I
PP
10/1000 µs 10/1000 µs 8/20 µs
max
V
9.2
10.3
11.2
14.4
17
19.9
21.5
24.4
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
64.5
77.4
93.6
113
137
162
209
246
275
328
A
(4)
171
152
140
105
92
79
73
64
53
48
44
40
37
34
32
29
24
20
16
13.9
11.5
9.7
7.5
6.1
5.7
4.6
Ω
0.012
0.019
0.023
0.038
0.051
0.066
0.076
0.092
0.133
0.163
0.194
0.235
0.275
0.325
0.361
0.440
0.644
0.925
1.40
1.94
2.87
4.04
6.59
9.34
11.6
21.1
max
V
A
(4)
mΩ
8.5
8.6
9.5
18
20
27
31
46
68
78
103
102
115
146
176
204
294
411
600
870
Characteristics
R
D (2)
8/20 µs
αT
(3)
max
10-4/ °C
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10.0
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
500 2000 5.0
500 2000 6.0
250 1000 6.5
10
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
8.5
10
12
13
15
18
20
22
24
26
28
30
33
40
48
58
70
85
6.4 6.74 10
6.7 7.05 10
7.2 7.58 10
9.4
9.9
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
11.1 11.7
13.3 14
14.4 15.2
16.7 17.6
20.0 21.1
22.2 23.4
24.4 25.7
26.7 28.1
28.9 30.4
31.1 32.7
33.3 35.1
36.7 38.6
44.4 46.7
53.3 56.1
64.4 67.8
77.8 81.9
94
99
13.4 746
13.7 730
14.5 690
19.5 512
21.7 461
25.3 394
27.2 368
32.5 308
39.3 254
42.8 234
48.3 207
50
59
200
169
53.5 187
64.3 156
69.7 143
84
100
121
146
178
212
265
353
388
119
100
83
69
56
47
38
28
26
1322
1897
2774
4063
5145
6038
100 111 117
130 144 152
154 171 180
170 189 199
188 209 220
317 31.5
1. Pulse test : t
p
< 50 ms
2. To calculate maximum clamping voltage at other surge level,use the following formula: V
CLmax
= V
CL
- R
D
x (I
PP
- I
PPappli
)
where I
PPappli
is the surge current in the application
3. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25°C x (1 +
αT
x (T
J
– 25))
V
CL
@ T
J
= V
CL
@ 25°C x (1 +
αT
x (T
J
– 25))
4. Surge capability given for both directions for unidirectional and bidirectional types.
Doc ID 5617 Rev 8
3/10
Characteristics
SMCJ
Figure 3.
Peak pulse power dissipation
versus initial junction temperature
Figure 4.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
T
j
initial = 25 °C
P
pp
(W)
2000
100.0
P
PP
(kW)
1500
10.0
1000
1.0
500
T
j
(°C)
0
0
25
50
75
100
125
150
175
t
P
(ms)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 5.
Clamping voltage versus peak pulse current (exponential waveform, maximum values)
I PP(A )
1000.0
T j initial=25 °C
100.0
8/20 µs
10.0
10/1000 µs
1.0
10 ms
SMCJ188A
SMCJ5.0A
SMCJ12A
SMCJ24A
SMCJ40A
SMCJ85A
V
CL
(V)
0.1
1
10
100
1000
4/10
Doc ID 5617 Rev 8
SMCJ
Characteristics
Figure 6.
Junction capacitance versus
Figure 7.
reverse applied voltage for
unidirectional types (typical values)
C(nF)
10.00
SMCJ5.0A
SMCJ12A
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
C(nF)
10.00
SMCJ5.0CA
SMCJ12CA
SMCJ24CA
SMCJ40CA
1.00
SMCJ24A
SMCJ40A
1.00
0.10
SMCJ85A
SMCJ188A
0.10
SMCJ85CA
SMCJ188CA
V
R
(V)
0.01
1
10
100
1000
V
R
(V)
0.01
1
10
100
1000
Figure 8.
Peak forward voltage drop
versus peak forward current
(typical values)
Figure 9.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
1.0E+02
I
FM
(A)
Z
th(j-a)
/ R
th(j-a)
1.00
Recommended pad layout
PCB FR4, copper thickness = 35 µm
1.0E+01
T
j
=125 °C
T
j
=25 °C
0.10
1.0E+00
V
FM
(V)
1.0E-01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
1.0E-03
t
P
(s)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
R
th(j-a)
(°C/W)
100
90
80
PCB FR4, copper thickness = 35 µm
Figure 11. Leakage current versus junction
temperature (typical values)
I
R
(nA)
1.0E+04
1.0E+03
70
60
50
40
30
1.0E+01
1.0E+02
V
R
=V
RM
V
RM
< 10 V
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S
CU
(cm²)
1.0E+00
25
50
V
R
=V
RM
V
RM
≥
10 V
T
j
(°C)
75
100
125
150
Doc ID 5617 Rev 8
5/10
NXP MCU
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