Datasheet> 器件分类 > 分立半导体> 晶体管> MJE13005DG-D-TA3-T

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MJE13005DG-D-TA3-T: 产品描述Power Bipolar Transistor; 产品类别分立半导体晶体管; 文件大小119KB，共3页; 制造商UNISONIC TECHNOLOGIES CO.,LTD; 官网地址http://www.unisonic.com.tw/; 标准

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MJE13005DG-D-TA3-T概述

Power Bipolar Transistor

MJE13005DG-D-TA3-T规格参数

参数名称	属性值
是否Rohs认证	符合
Objectid	1274610270
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
最大集电极电流 (IC)	4 A
集电极-发射极最大电压	400 V
配置	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)	30
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	NPN
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	4 MHz

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UNISONIC TECHNOLOGIES CO., LTD

MJE13005D

Preliminary

NPN SILICON TRANSISTOR

HIGH VOLTAGE

FAST-SWITCHING NPN POWER

TRANSISTOR



DESCRIPTION

TO-220

TO-220F

The UTC

MJE13005D

is a high voltage fast-switching NPN

power transistor. It is characterized by high breakdown voltage,

high current capability, high switching speed and high reliability.

The UTC

MJE13005D

is intended to be used in energy-saving

light, electronic ballast, high frequency switching power supply, high

frequency power transform or common power amplifier, etc.

TO-251

TO-126



FEATURES

TO-126S

* High Breakdown Voltage

* High Current Capability

* High Switching Speed

* High Reliability

* RoHS-Compliant Product



INTERNAL SCHEMATIC DIAGRAM



ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

MJE13005DL-x-TA3-T

MJE13005DG-x-TA3-T

MJE13005DL-x-TF3-T

MJE13005DG-x-TF3-T

MJE13005DL-x-TM3-T

MJE13005DG-x-TM3-T

MJE13005DL-x-T60-K

MJE13005DG-x-T60-K

MJE13005DL-x-T6S-K

MJE13005DG-x-T6S-K

Package

TO-220

TO-220F

TO-251

TO-126

TO-126S

Pin Assignment

Packing

Tube

Bulk

MJE13005DL-x-TA3-T

(1)Packing Type

(2)Package Type

(3)Rank

(4)Lead Free

(1) T: Tube, K: Bulk

(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251

(3) T60: TO-126, T6S: TO-126S

(3) x: refer to Classification of h

FE1

(4) L: Lead Free, G: Halogen Free

www.unisonic.com.tw

1 of 3

QW-R502-379.f

MJE13005DG-D-TA3-T相似产品对比

	MJE13005DG-D-TA3-T	MJE13005DL-B-TA3-T	MJE13005DL-D-TA3-T	MJE13005DG-B-TA3-T	MJE13005DG-A-TA3-T	MJE13005DG-C-TA3-T	MJE13005DG-E-TA3-T	MJE13005DL-A-TA3-T	MJE13005DL-C-TA3-T	MJE13005DL-E-TA3-T
描述	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合	符合
Objectid	1274610270	1274610276	1274610280	1274610266	1274610264	1274610268	1274610272	1274610274	1274610278	1274610282
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
最大集电极电流 (IC)	4 A	4 A	4 A	4 A	4 A	4 A	4 A	4 A	4 A	4 A
集电极-发射极最大电压	400 V	400 V	400 V	400 V	400 V	400 V	400 V	400 V	400 V	400 V
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)	30	20	30	20	15	25	40	15	25	40
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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