BZG04-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
•
•
•
•
•
•
•
Glass passivated junction
High reliability
e3
Stand-off Voltage range 8.2 V to 220 V
Excellent clamping cabability
Fast response time (typ.
≤
1 ps from 0 to V
Zmin
)
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
15811
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case:
DO-214AC
Weight:
approx. 77 mg
Packaging Codes/Options:
TR / 1.5 k 7 " reel
TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
R
thJA
< 25 K/W, T
amb
= 100 °C
R
thJA
< 100 K/W, T
amb
= 50 °C
Non repetitive peak surge power t
p
= 10/1000
µs
sq.pulse,
dissipation
T
j
= 25 °C prior to surge
Peak forward surge current
Junction temperature
Storage temperature range
10 ms single half sine wave
Symbol
P
diss
P
diss
P
ZSM
I
FSM
T
j
T
stg
Value
3
1.25
300
50
150
- 65 to + 150
Unit
W
W
W
A
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction lead
Junction ambient
mounted on epoxy-glass hard
tissue, Fig. 1a
mounted on epoxy-glass hard
tissue, Fig. 1b
mounted on Al-oxid-ceramic
(Al
2
O
3
), Fig. 1b
Test condition
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85594
Rev. 2.2, 15-Sep-05
Test condition
I
F
= 0.5 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
www.vishay.com
1
BZG04-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
a)
b)
I
F
– Forward Current (A )
3.0
5.0
2.5
2.0
1.5
1.0
0.5
2.0
1.5
10.0
2.0
25.0
94 9313
1.0
25.0
94 9581
0
0
0.5
1.0
1.5
2.0
V
F
– Forward Voltage ( V )
Figure 1. Boards for R
thJA
definition (copper overlay 35µ)
Figure 3. Forward Current vs. Forward Voltage
R
thJA
–Therm. Resist.Junction/ Ambient ( K/W)
30
P
ZSM
– Non-Repetitive Surge Power
Dissipation (W)
40
10000
1000
20
l
10
l
100
0
0
5
10
15
T
L
= constant
20
25
30
94 9582
10
0.01
0.1
1
10
100
94 9570
l – Lead Length ( mm )
t
p
– Pulse Length ( ms )
Figure 2. Typ. Thermal Resistance vs. Lead Length
Z thp–Thermal Resistance for Pulse Cond.(K/W
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
1000
100
t
p
/T=0.5
10
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
1
10
–5
10
–4
10
–3
t
p
/T=0.01
10
–2
10
–1
10
0
10
1
10
2
94 9583
t
p
– Pulse Length ( s )
Figure 5. Thermal Response
Document Number 85594
Rev. 2.2, 15-Sep-05
www.vishay.com
3
BZG04-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85594
Rev. 2.2, 15-Sep-05
www.vishay.com
5
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