SMS4003K
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
0.5 A, 30V
N-Channel MOSFET
FEATURES
Low gate voltage threshold V
GS(TH)
to facilitate drive circuit design
Low gate charge for fast switching
ESD protected gate
Minimum breakdown voltage rating of 30V
1
SOT-23
A
L
3
3
Top View
2
C B
1
2
K
E
D
APPLICATION
Level shifters
Level switches
Low side load switches
Portable applications
F
G
H
J
REF.
A
B
C
D
E
F
DEVICE MARKING: TR8
3
DRAIN
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
1
GATE
*
* Gate
Pretection
Diode
SOURCE
2
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current , Steady T
A
=25°
C
State
T
A
=85°
C
Power Dissipation
1
, Steady State
Continuous Drain Current
1
, t<10s
Power Dissipation
1
, t<5s
Pulsed Drain Current
Steady State
Maximum Junction – Ambient
t<10s
1
2
1
1
SYMBOL
V
DS
V
GS
I
D
P
D
RATING
30
±20
0.5
0.37
0.69
0.56
0.40
0.83
1.7
180
150
300
150, -55~150
1.0
260
UNIT
V
V
A
W
A
W
A
°
C/W
°
C
A
°
C
T
A
=25°
C
T
A
=85°
C
I
D
P
D
I
DM
R
θJA
T
J
, T
STG
I
S
T
L
Steady State
Source Current (Body Diode)
Operating Junction & Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8” from
case 10s
Note:
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area=1.127 in sq【1 oz】including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size.
10-Jan-2010 Rev. A
Page 1 of 4
SMS4003K
Elektronische Bauelemente
0.5 A, 30V
N-Channel MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
3
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Fall Time
4
Total Gate Charge
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
T
J
=25°
C
T
J
=125°
C
4
4
4
3
3
SYMBOL
V
(BR)DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
T
d(ON)
T
R
T
d(OFF)
T
F
Q
G
Q
G(TH)
Q
GS
Q
GD
MIN
30
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
1.5
1.0
0.33
21
19.7
8.1
16.7
47.9
65.1
64.2
1.15
0.15
0.32
0.23
0.65
0.45
14
MAX
-
1.6
±1.0
1.0
2.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
-
UNIT
V
µA
V
TEST CONDITION
V
GS
=0V, I
D
=100µA
V
DS
= V
GS,
I
D
=250µA
V
GS
=±10V
V
DS
=30V, V
GS
=0V, T
J
=25°
C
V
GS
=2.5V, I
D
=10mA
V
GS
=4.0V, I
D
=10mA
STATIC CARACTERISTICS
µA
S
V
DS
=3V, I
D
=10mA
V
DS
=5V
V
GS
=0V
f=1MHz
V
GS
=4.5V
V
DD
=5V
I
D
=0.1A
R
G
=50
V
GS
=5V
V
DS
=24V
I
D
=0.1A
DYNAMIC CHARACTERISTICS
pF
SWITCHING CHARACTERISTICS
Turn-off Delay Time
nS
nC
SOURCE-DRAIN DIODE CARACTERISTICS
Forward On Voltage
Reverse Recovery Time
V
SD
T
rr
V
nS
V
GS
=0V
I
S
=10mA
V
GS
=0V, I
S
=10mA, dls/dt=8A /µs
Note:
3. Pulse Test: Pulse width
≦300µs,
duty cycle
≦2%.
4. Switching characteristics are independent of operating junction temperatures.
10-Jan-2010 Rev. A
Page 2 of 4
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