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TSI20H120CW

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-262, I2PAK, 3 PIN
产品类别分立半导体    二极管   
文件大小237KB,共5页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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TSI20H120CW概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-262, I2PAK, 3 PIN

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TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1
2
3
I
2
PAK
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case:
I
2
PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP
I
F
= 5A
Instantaneous forward voltage per diode
( Note1 )
I
F
= 10A
I
F
= 5A
I
F
= 10A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
T
J
= 25°C
V
F
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
R
R
θJC
R
θJL
T
J
T
STG
0.57
0.67
0.50
0.59
-
8
MAX
-
0.79
-
0.68
200
25
TYP
0.62
0.78
0.53
0.63
-
8
-
0.87
-
0.72
200
25
2.8
3.8
- 55 to +150
- 55 to +150
TSI20H
100CW
100
TSI20H
120CW
120
20
10
150
10000
MAX
TYP
0.72
0.81
0.58
0.66
-
3
MAX
-
0.90
-
0.75
100
15
TYP
0.77
0.83
0.62
0.68
-
3
MAX
-
0.93
-
0.78
100
15
μA
mA
°C/W
°C/W
°C
°C
V
TSI20H
150CW
150
TSI20H
200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Document Number: DS_D1411038
Version: C15

TSI20H120CW相似产品对比

TSI20H120CW TSI20H100CW TSI20H150CW TSI20H200CW
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-262, I2PAK, 3 PIN 20A, 100V - 200V Trench Schottky Rectifiers 20A, 100V - 200V Trench Schottky Rectifiers 20A, 100V - 200V Trench Schottky Rectifiers

 
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