TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1
2
3
I
2
PAK
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case:
I
2
PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP
I
F
= 5A
Instantaneous forward voltage per diode
( Note1 )
I
F
= 10A
I
F
= 5A
I
F
= 10A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
T
J
= 25°C
V
F
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
R
R
θJC
R
θJL
T
J
T
STG
0.57
0.67
0.50
0.59
-
8
MAX
-
0.79
-
0.68
200
25
TYP
0.62
0.78
0.53
0.63
-
8
-
0.87
-
0.72
200
25
2.8
3.8
- 55 to +150
- 55 to +150
TSI20H
100CW
100
TSI20H
120CW
120
20
10
150
10000
MAX
TYP
0.72
0.81
0.58
0.66
-
3
MAX
-
0.90
-
0.75
100
15
TYP
0.77
0.83
0.62
0.68
-
3
MAX
-
0.93
-
0.78
100
15
μA
mA
°C/W
°C/W
°C
°C
V
TSI20H
150CW
150
TSI20H
200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Document Number: DS_D1411038
Version: C15
TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
ORDER INFORMATION (EXAMPLE)
TSI20H100CW C0G
Green compound code
Packing code
Part no.
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
25
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
TSI20H100CW
AVERAGE FORWARD CURRENT (A)
20
10
T
J
=150
o
C
15
1
T
J
=125
o
C
10
T
J
=100
o
C
0.1
T
J
=25
o
C
5
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
0
0
25
50
75
100
125
150
0.01
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE (V)
CASE TEMPERATURE (
o
C)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
TSI20H120CW
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
TSI20H150CW
10
T
J
=150
o
C
T
J
=125
o
C
1
10
T
J
=150
o
C
T
J
=125
o
C
1
T
J
=100
o
C
0.1
T
J
=25
o
C
T
J
=100
o
C
0.1
T
J
=25
o
C
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
Document Number: DS_D1411038
Version: C15
TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100
TSI20H100CW
INSTANTANEOUS REVERSE CURRENT
(mA)
TSI20H200CW
10
10
T
J
=150
o
C
T
J
=150
o
C
1
0.1
0.01
0.001
T
J
=25
o
C
T
J
=125
o
C
T
J
=100
o
C
1
T
J
=125
o
C
0.1
T
J
=100
o
C
T
J
=25
o
C
0.0001
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
100
TST30H120CW
TSI20H120CW
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
100
TSI20H150CW
10
1
0.1
0.01
0.001
0.0001
0.00001
10
1
0.1
0.01
0.001
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
T
J
=25
o
C
T
J
=25
o
C
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 10 TYPICAL JUNCTION CAPACITANCE
10000
TSI20H200CW
10
1
T
J
=150
o
C
0.1
0.01
0.001
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
JUNCTION CAPACITANCE (pF)
TSI20H100CW
f=1.0MHz
Vsig=50mVp-p
1000
TSI20H120CW
T
J
=125
o
C
T
J
=100
o
C
100
TSI20H200CW
TSI20H150CW
T
J
=25
o
C
10
0.1
1
10
100
REVERSE VOLTAGE (V)
Document Number: DS_D1411038
Version: C15
TSI20H150CW - TSI20H200CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
I
2
PAK
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min
-
1.14
2.80
0.68
2.41
9.07
7.79
4.40
1.14
2.20
0.35
0.95
Max
10.50
1.40
4.20
0.94
2.67
9.47
9.35
4.70
1.40
2.80
0.64
1.45
Unit (inch)
Min
-
0.045
0.110
0.027
0.095
0.357
0.307
0.173
0.045
0.087
0.014
0.037
Max
0.413
0.055
0.165
0.037
0.105
0.373
0.368
0.185
0.055
0.110
0.025
0.057
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1411038
Version: C15
TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no
responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual
property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC
assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including
liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other
intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling
these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from
such improper use or sale.
Document Number: DS_D1411038
Version: C15
MEMS传感器
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