N-CHANNEL POWER MOSFET
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compli |
| 雪崩能效等级（Eas） | 300 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (Abs) (ID) | 30 A |
| 最大漏极电流 (ID) | 30 A |
| 最大漏源导通电阻 | 0.04 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252 |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 46 W |
| 最大脉冲漏极电流 (IDM) | 120 A |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 30N06L-TN3-R | 30N06G-TF3-T | 30N06G-TM3-T | 30N06G-TN3-R | 30N06G-TN3-T | 30N06L-TF1-T | 30N06L-TF2-T | 30N06L-TM3-T | 30N06L-TN3-T | 30N06_15 | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET |
| 是否Rohs认证 | 符合 | 不符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | - |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | - |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli | compli | - |
| 雪崩能效等级（Eas） | 300 mJ | 300 mJ | 300 mJ | 300 mJ | 300 mJ | 300 mJ | 300 mJ | 300 mJ | 300 mJ | - |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | - |
| 最大漏极电流 (Abs) (ID) | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | - |
| 最大漏极电流 (ID) | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A | - |
| 最大漏源导通电阻 | 0.04 Ω | 0.04 Ω | 0.04 Ω | 0.04 Ω | 0.04 Ω | 0.04 Ω | 0.04 Ω | 0.04 Ω | 0.04 Ω | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95代码 | TO-252 | TO-220AB | TO-251 | TO-252 | TO-252 | TO-220AB | TO-220AB | TO-251 | TO-252 | - |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSIP-T3 | R-PSSO-G2 | - |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 端子数量 | 2 | 3 | 3 | 2 | 2 | 3 | 3 | 3 | 2 | - |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | IN-LINE | SMALL OUTLINE | - |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| 最大功率耗散 (Abs) | 46 W | 45 W | 46 W | 46 W | 46 W | 45 W | 45 W | 46 W | 46 W | - |
| 最大脉冲漏极电流 (IDM) | 120 A | 120 A | 120 A | 120 A | 120 A | 120 A | 120 A | 120 A | 120 A | - |
| 表面贴装 | YES | NO | NO | YES | YES | NO | NO | NO | YES | - |
| 端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | - |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - |
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