1600V 75A thyristor Module
RoHS Compliant
MIMMK75T160UX
Features
· Isolated Module Package
· Isolation voltage 3000 V
· Three Phase Bridge and a Thyristor
Applications
·
Current Stabilized Power Supply
·
Switching Power Supply
·
Inverter For AC or DC Motor Control
■
Diode
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
D(AV)
I
FSM
It
T
J
T
STG
V
isol
Weight
2
T
C
=25°C unless otherwise specified
Test Conditions
T
C
=90°C, moudle
T
J
=45°C, t=10ms, 50Hz, Sine
T
J
=45°C,t=8.3ms, 60Hz, Sine
T
J
=45°C, t=10ms, 50Hz, Sine
T
J
=45°C,t=8.3ms, 60Hz, Sine
Max.
1600
75
1050
1150
5512
6612
-40 to +150
-40 to +125
AC, 50Hz, t=1min
3000
332
Unit
V
A
A
A
A
2
s
A
2
s
°C
°C
V
g
Parameter
Repetitive Reverse Voltage
Average Forward Current
Non-Repetitive Surge
Forward Current
I t (For Fusing)
Junction Temperature
Storage Temperature Range
Insulation Test Voltage
2
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
I
RM
V
F
R
θJC
R
θCS
Parameter
Reverse Leakage Current
Forward Voltage
Thermal Resistance
Junction-to-Case
Thermal Resistance
Case -to-Sink
Test Conditions
V
R
=1600V
V
R
=1600V, T
J
=125°C
I
F
=75A
I
F
=75A,
T
J
=125°C
T
C
=25°C unless otherwise specified
Min.
--
--
--
--
--
--
--
--
Typ.
--
--
1.05
1.0
--
--
--
--
Max.
500
5
--
--
0.84
0.14
0.42
0.07
Unit
µA
mA
V
V
°C /W
°C /W
°C /W
°C /W
per diode
per module
per diode
per module
MIMMK75T160UX
■
Thyristor
ABSOLUTE MAXIMUM RATINGS
Symbol
Test Condition
V
RRM
I
T(AV)
I
TSM
I
2
t
T
C
=90 , 180° conduction, half sine wave;
T
J
=45 , t=10ms (50Hz), sine, V
R
=V
RRM
;
T
J
=45 , t=8.3 ms (60Hz), sine, V
R
= V
RRM
;
T
J
=45 , t=10ms (50Hz), sine, V
R
=V
RRM
;
T
J
=45 , t=8.3 ms (60Hz), sine, V
R
= V
RRM
;
dV/dt
dI/dt
V
ISOL
T
J
T
STG
T
J
=125 , exponential to 67% rated V
DRM
T
J
=125 , I
TM
=500A rated V
DRM
50Hz, all terminals shorted, t=1s, I
ISOL
≤1mA
;
Max. junction operating temperature range
Max. storage temperature range
Mounting torque(M6)
Terminal connection torque(M6)
Terminal connection torque(M4)
T
C
=25°C unless otherwise specified
Value
1600
75
1250
1350
7812
9112
1000
150
3000
-40½125
-40½125
3 to 5
3 to 5
1 to 2
Unit
V
A
A
A
2
s
V/us
A/us
V~
℃
N·m
N·m
N·m
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol Test Condition
I
DRM
/I
RRM
V
TM
V
GT
T
J
=125 , V
D
=V
R
=1600V;
I
TM
=280A, t
d
=10 ms, half sine;
V
A
=6V, R
A
=1Ω, Tj=-40°C;
V
A
=6V, R
A
=1Ω;
V
A
=6V, R
A
=1Ω, Tj=125°C;
V
A
=6V, R
A
=1Ω, Tj=-40°C;
I
GT
P
GM
P
GM(AV)
R
thjc
R
THCS
V
A
=6V, R
A
=1Ω;
V
A
=6V, R
A
=1Ω, Tj=125°C;
tp≤5ms, Tj=125°C;
f=50Hz, Tj=125°C;
Thermal Resistance , Junction-to-Case
Thermal Resistance, Case -to-Sink
T
C
=25°C unless otherwise specified
Min. Typ. Max. Unit
20
1.50
4
2.5
1.7
200
100
80
12
3
0.25
0.09
W
W
K/W
K/W
mA
V
mA
V
MIMMK75T160UX
Characteristic curves
200
160
120
80
40
0
T
J
=25°C
T
J
=125°C
1
Forward Current I
F
(A)
10
Z
thJC
(K/W)
-1
10
-2
10
-3
Duty
Duty
0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
Single Pulse
Single Pulse
0
0.3
0.6
0.9
1.2
1.5
1.8
10
-4 -4
10
10
-3
10
-2
10
-1
1
Forward Voltage Drop V
F
（V）
Figure1. Diode Forward Voltage Drop vs Forward Current
150
125
Power Dissipation (W)
Output Current (A)
100
75
50
25
0
0
125
100
75
50
25
0
Rectangular Pulse Duration (seconds)
Figure 2. Diode Thermal Impedance Z
thJC
R
THSA
=0.02K/W-Delta R
0.04K/W
0.06K/W
0.08K/W
0.1K/W
0.16K/W
0.2K/W
25
50
70
100
125
150
0
25
50
75
100
125
150
Output Current (A)
Figure 3. SCR Output Current vs Power Dissipation
1000
Instantaneous On-state Current (A)
Transient Thermal Impedance Z
thJC
Case Temperature (°C)
Figure 4. SCR Output Current vs Case Temperature
1
100
T
J
=125°C
T
J
=25℃
T
J
=125℃
0.1
Steady State Value
(DC Operation)
0.01
10
T
J
=25°C
Per junction
1
0
0.5
1
1.5
2
2.5
3
3.5
0.001
0.001
0.01
0.1
1
10
Instantaneous On-state Voltage (V)
Figure 5. SCR On State Voltage Drop
Square Wave Pulse Duration (s)
Figure 6. SCR Thermal Impedance Z
thJC
MIMMK75T160UX
100
Rectangular gate pulse
Instantaneous Gate Voltage (V)
a)Recommended load line for
rated di/dt:20V, 20Ω
tr =0.5s, tp≥6 s
b)Recommended load line for
10
≤30%
rated di/dt:15V, 40Ω
(a)
tr =1s, tp
≥6
s
(b)
T
J
=-40℃
T
J
=25℃
T
J
=125℃
(1) P
GM
= 200 W, tp = 300s
(2) P
GM
= 60 W, tp = 1 ms
(3) P
GM
= 30 W, tp = 2 ms
(4) P
GM
= 12 W, tp = 5 ms
1
V
GD
I
GD
(4)
(3)
(2)
(1)
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Figure 7. Gate Characteristics
Package Outline (Dimensions in mm)
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