BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Rectification, general purpose
PARTS TABLE
PART
BYX82
BYX83
BYX84
BYX85
BYX86
TYPE DIFFERENTIATION
V
R
= 200 V; I
FAV
= 2 A
V
R
= 400 V; I
FAV
= 2 A
V
R
= 600 V; I
FAV
= 2 A
V
R
= 800 V; I
FAV
= 2 A
V
R
= 1000 V; I
FAV
= 2 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYX82
BYX83
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYX84
BYX85
BYX86
Peak forward surge current
Repetitive peak forward current
Average forward current
i
2
* t-rating
Junction and storage temperature
range
T
amb
≤
45 °C
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
i
2
* t
T
j
= T
stg
VALUE
200
400
600
800
1000
50
10
2
8
- 55 to + 175
UNIT
V
V
V
V
V
A
A
A
A
2
* s
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
Document Number: 86052
Rev. 1.6, 09-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Reverse recovery charge
TEST CONDITION
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= I
R
= 1 A, dI/dt = 5 A/μs
SYMBOL
V
F
I
R
I
R
C
D
t
rr
Q
rr
MIN.
-
-
-
-
-
-
TYP.
0.9
0.1
10
20
2
3
MAX
1
1
25
-
4
6
UNIT
V
μA
μA
pF
μs
μC
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
R
thJA
–Therm. Resist. Junction/ Ambient ( K/W)
120
l
100
80
60
40
20
T
L
= constant
l
I
F
– Forward Current (A )
10
1
T
j
= 175°C
T
j
= 25°C
0.1
Scattering Limits
0
0
5
10
15
20
25
30
94 9573
0.01
0
0.6
1.2
1.8
2.4
3.0
l – Lead Length ( mm )
94 9572
V
F
– Forward Voltage ( V )
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Forward Current vs. Forward Voltage
240
30
R
thJA
≤
57 K/W
R
thJA
≤
100 K/W
V
RRM
V
R
BYX
82
BYX
83
BYX
84
BYX
85
BYX
86
C
D
– Diode Capacitance ( pF )
R
thJA
≤
35 K/W
T
j
– Junction Temperature ( °C )
200
160
120
80
40
0
24
18
12
6
0
0.1
1
f = 1 MHz
T
j
= 25°C
10
100
94 9579
1600
0
400
800
1200
Reverse / Repetitive Peak Reverse Voltage ( V )
94 9574
V
R
– Reverse Voltage ( V )
Fig. 2 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
Fig. 4 - Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86052
Rev. 1.6, 09-Aug-10
BYX82, BYX83, BYX84, BYX85, BYX86
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
Z
thp
–Thermal Resistance for PulseCond.(K/W)
1000
V
RRM
≤
200 V
R
thJA
≤
100 K/W
100
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
0.02
0.01
1
10
–3
Single Pulse
10
–2
10
–1
10
0
10
1
10
0
10
1
10
2
I
FRM
– Repetitive Peak
Forward Current ( A )
T
amb
= 25°C
T
amb
=100 °C
T
amb
= 125 °C
T
amb
= 150 °C
T
amb
= 45 °
C
T
amb
= 70°C
10
94 9575
t
p
– Pulse Length ( s )
Fig. 5 - Thermal Response
Z
thp
– Thermal Resistance for PulseCond.(K/W)
1000
V
RRM
≤
1000 V
t
≤
10
μs
100
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
0.02
0.01
1
10
–3
Single Pulse
10
–2
10
–1
10
0
10
1
10
–1
10
0
10
1
I
FRM
– Repetitive Peak
Forward Current ( A )
T
amb
=100°C
R
thJA
≤
100 K/W
T
amb
= 45°C
T
amb
= 60°C
T
amb
= 70°C
T
amb
= 25°C
10
94 9578
t
p
– Pulse Length ( s )
Fig. 6 - Thermal Response
Z
thp
– Thermal Resistance for Pulse Cond.(K/W)
1000
V
RRM
≤
200 V
R
thJA
≤
57 K/W
T
amb
= 25°C
T
amb
= 70°C
T
amb
= 100°C
T
amb
= 125°C
T
amb
= 150°C
Single Pulse
10
–2
10
–1
10
0
10
0
10
1
I
FRM
– Repetitive Peak
Forward Current ( A )
T
amb
= 45°C
100
t
p
/T = 0.5
10
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
10
–3
1
10
–4
94 9577
t
p
– Pulse Length ( s )
Fig. 7 - Thermal Response
Document Number: 86052
Rev. 1.6, 09-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
Z
thp
–Thermal Resistance for Pulse Cond.(K/W)
1000
V
RRM
≤
1000 V
t
≤
10
μs
100
t
p
/T = 0.5
10
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
1
10
–4
10
–3
Single Pulse
10
–2
10
–1
10
0
T
amb
= 125°C
10
0
10
1
I
FRM
– Repetitive Peak
Forward Current ( A )
100°C
R
thJA
≤
57 K/W
T
amb
= 25 °C
T
amb
= 45 °C
70°C
94 9576
t
p
– Pulse Length ( s )
Fig. 8 - Thermal Response
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
www.vishay.com
4
3.6 (0.142) max.
20543
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86052
Rev. 1.6, 09-Aug-10
Legal Disclaimer Notice
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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1