Datasheet> 器件分类 > 分立半导体> 晶体管> SIHFR9020TL

文档预览

SIHFR9020TL: 产品描述9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252; 产品类别分立半导体晶体管; 文件大小348KB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com

下载文档详细参数选型对比全文预览

SIHFR9020TL概述

9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252

9.9 A, 50 V, 0.28 ohm, P沟道, 硅, POWER, 场效应管, TO-252

SIHFR9020TL规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Vishay(威世)
零件包装代码	TO-252
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	250 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	50 V
最大漏极电流 (Abs) (ID)	9.9 A
最大漏极电流 (ID)	9.9 A
最大漏源导通电阻	0.28 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	42 W
最大脉冲漏极电流 (IDM)	40 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON

文档预览

下载PDF文档

全文
预览

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= - 10 V

6.5

Single

FEATURES

- 50

0.28

• Surface Mountable (Order As IRFR9020,

SiHFR9020)

• Straight Lead Option (Order As IRFU9020,

SiHFU9020)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

• Simple Drive Requirements

• Ease of Paralleling

• Material categorization: For definitions of compliance

please see

www.vishay.com/doc?99912

DESCRIPTION

DPAK

(TO-252)

IPAK

(TO-251)

D S

P-Channel MOSFET

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt.

The power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The TO-252

surface mount package brings the advantages of power

MOSFET’s to high volume applications where PC board

surface mounting is desirable. The surface mount option

IRFR9020, SiHFR9020 is provided on 16mm tape. The

straight lead option IRFU9020, SiHFU9020 of the device is

called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

DPAK (TO-252)

SiHFR9020TR-GE3

IRFR9020TRPbF

SiHFR9020T-E3

DPAK (TO-252)

SiHFR9020TRL-GE3

IRFR9020TRLPbF

SiHFR9020TL-E3

IPAK (TO-251)

SiHFU9020-GE3

IRFU9020PbF

SiHFU9020-E3

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHFR9020-GE3

IRFR9020PbF

SiHFR9020-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Current

at - 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

LIMIT

- 50

± 20

- 9.9

- 6.3

- 40

0.33

250

- 9.9

4.2

5.8

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

= 25 °C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).

b. V

= - 25 V, Starting T

= 25 °C, L = 5.1 mH, R

= 25

,

Peak I

= - 9.9 A

c. I



- 9.9 A, dI/dt



-120 A/μs, V



40 V, T



150 °C.

d. 0.063" (1.6 mm) from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0169-Rev. D, 04-Feb-13

Document Number: 90350

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFR9020TL相似产品对比

	SIHFR9020TL	SIHFR9020	SIHFR9020-E3	SIHFR9020T	SIHFR9020T-E3	SIHFR9020TL-E3	SIHFU9020	SIHFU9020-E3	IRFR9020TRR
描述	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	MOSFET P-CH 50V 9.9A DPAK
是否无铅	含铅	含铅	不含铅	含铅	不含铅	不含铅	含铅	不含铅	-
是否Rohs认证	不符合	不符合	符合	不符合	符合	符合	不符合	符合	-
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	-	Vishay(威世)	-	-	-
零件包装代码	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251	TO-251	-
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	-
针数	3	3	3	3	3	3	3	3	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	-
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	-
雪崩能效等级（Eas）	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ	-
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	-
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
最小漏源击穿电压	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	-
最大漏极电流 (Abs) (ID)	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	-
最大漏极电流 (ID)	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	-
最大漏源导通电阻	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95代码	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251	TO-251	-
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	-
JESD-609代码	e0	e0	e3	e0	e3	e3	e0	e3	-
元件数量	1	1	1	1	1	1	1	1	-
端子数量	2	2	2	2	2	2	3	3	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	-
峰值回流温度（摄氏度）	240	240	260	240	260	260	240	260	-
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	-
最大功率耗散 (Abs)	42 W	42 W	42 W	42 W	42 W	42 W	42 W	42 W	-
最大脉冲漏极电流 (IDM)	40 A	40 A	40 A	40 A	40 A	40 A	40 A	40 A	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
表面贴装	YES	YES	YES	YES	YES	YES	NO	NO	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	-
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	-
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
处于峰值回流温度下的最长时间	30	30	40	30	40	40	30	40	-
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-

SIHFR9020TL

SIHFR9020TL概述

SIHFR9020TL规格参数

文档预览

SIHFR9020TL相似产品对比

推荐资源