Datasheet> 器件分类 > 半导体> 分立半导体> IRFR9020TRR

文档预览

IRFR9020TRR: 产品描述MOSFET P-CH 50V 9.9A DPAK; 产品类别半导体分立半导体; 文件大小348KB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com

下载文档详细参数选型对比全文预览

IRFR9020TRR概述

MOSFET P-CH 50V 9.9A DPAK

IRFR9020TRR规格参数

参数名称	属性值
FET 类型	P 沟道
技术	MOSFET（金属氧化物）
漏源电压（Vdss）	50V
电流 - 连续漏极（Id）（25°C 时）	9.9A（Tc）
驱动电压（最大 Rds On，最小 Rds On）	10V
不同 Id，Vgs 时的 Rds On（最大值）	280 毫欧 @ 5.7A，10V
不同 Id 时的 Vgs（th）（最大值）	4V @ 250µA
不同 Vgs 时的栅极电荷（Qg）（最大值）	14nC @ 10V
Vgs（最大值）	±20V
不同 Vds 时的输入电容（Ciss）（最大值）	490pF @ 25V
功率耗散（最大值）	42W（Tc）
工作温度	-55°C ~ 150°C（TJ）
安装类型	表面贴装
供应商器件封装	D-Pak
封装/外壳	TO-252-3，DPak（2 引线 + 接片），SC-63

文档预览

下载PDF文档

全文
预览

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= - 10 V

6.5

Single

FEATURES

- 50

0.28

• Surface Mountable (Order As IRFR9020,

SiHFR9020)

• Straight Lead Option (Order As IRFU9020,

SiHFU9020)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

• Simple Drive Requirements

• Ease of Paralleling

• Material categorization: For definitions of compliance

please see

www.vishay.com/doc?99912

DESCRIPTION

DPAK

(TO-252)

IPAK

(TO-251)

D S

P-Channel MOSFET

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt.

The power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The TO-252

surface mount package brings the advantages of power

MOSFET’s to high volume applications where PC board

surface mounting is desirable. The surface mount option

IRFR9020, SiHFR9020 is provided on 16mm tape. The

straight lead option IRFU9020, SiHFU9020 of the device is

called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

DPAK (TO-252)

SiHFR9020TR-GE3

IRFR9020TRPbF

SiHFR9020T-E3

DPAK (TO-252)

SiHFR9020TRL-GE3

IRFR9020TRLPbF

SiHFR9020TL-E3

IPAK (TO-251)

SiHFU9020-GE3

IRFU9020PbF

SiHFU9020-E3

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHFR9020-GE3

IRFR9020PbF

SiHFR9020-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Current

at - 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

LIMIT

- 50

± 20

- 9.9

- 6.3

- 40

0.33

250

- 9.9

4.2

5.8

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

= 25 °C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).

b. V

= - 25 V, Starting T

= 25 °C, L = 5.1 mH, R

= 25

,

Peak I

= - 9.9 A

c. I



- 9.9 A, dI/dt



-120 A/μs, V



40 V, T



150 °C.

d. 0.063" (1.6 mm) from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0169-Rev. D, 04-Feb-13

Document Number: 90350

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFR9020TRR相似产品对比

	IRFR9020TRR	SIHFR9020	SIHFR9020-E3	SIHFR9020T	SIHFR9020T-E3	SIHFR9020TL	SIHFR9020TL-E3	SIHFU9020	SIHFU9020-E3
描述	MOSFET P-CH 50V 9.9A DPAK	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252	9.9 A, 50 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
是否无铅	-	含铅	不含铅	含铅	不含铅	含铅	不含铅	含铅	不含铅
是否Rohs认证	-	不符合	符合	不符合	符合	不符合	符合	不符合	符合
厂商名称	-	Vishay(威世)	Vishay(威世)	Vishay(威世)	-	Vishay(威世)	Vishay(威世)	-	-
零件包装代码	-	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251	TO-251
包装说明	-	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
针数	-	3	3	3	3	3	3	3	3
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	-	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
雪崩能效等级（Eas）	-	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ	250 mJ
外壳连接	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	-	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
最大漏极电流 (Abs) (ID)	-	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A
最大漏极电流 (ID)	-	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A	9.9 A
最大漏源导通电阻	-	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω
FET 技术	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	-	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251	TO-251
JESD-30 代码	-	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3
JESD-609代码	-	e0	e3	e0	e3	e0	e3	e0	e3
元件数量	-	1	1	1	1	1	1	1	1
端子数量	-	2	2	2	2	2	2	3	3
工作模式	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE
峰值回流温度（摄氏度）	-	240	260	240	260	240	260	240	260
极性/信道类型	-	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
最大功率耗散 (Abs)	-	42 W	42 W	42 W	42 W	42 W	42 W	42 W	42 W
最大脉冲漏极电流 (IDM)	-	40 A	40 A	40 A	40 A	40 A	40 A	40 A	40 A
认证状态	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	-	YES	YES	YES	YES	YES	YES	NO	NO
端子面层	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
端子形式	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
端子位置	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	-	30	40	30	40	30	40	30	40
晶体管应用	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

IRFR9020TRR

IRFR9020TRR概述

IRFR9020TRR规格参数

文档预览

IRFR9020TRR相似产品对比

推荐资源