DISCRETE SEMICONDUCTORS
DATA SHEET
BFS505
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
Low current consumption
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability
•
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
G
UM
F
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
up to T
s
= 147
°C;
note 1
I
C
= 5 mA; V
CE
= 6 V; T
j
= 25
°C
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°C
R
BE
= 0
CONDITIONS
open emitter
MIN.
−
−
−
−
60
−
TYP.
−
−
−
−
120
9
17
1.2
1
2
3
PINNING
PIN
base
emitter
collector
1
Top view
BFS505
DESCRIPTION
Code: N0
handbook, 2 columns
3
2
MBC870
Fig.1 SOT323.
MAX.
20
15
18
150
250
−
−
1.7
UNIT
V
V
mA
mW
GHz
dB
dB
I
c
= 5 mA; V
CE
= 6 V; f = 900 MHz;
−
T
amb
= 25
°C
I
c
= 1.25 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°C
−
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 147
°C;
note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
BFS505
MAX.
20
15
2.5
18
150
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 147
°C;
note 1
THERMAL RESISTANCE
190 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C,
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CB
= 0.5 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°C
MIN.
−
60
−
−
−
−
−
−
13
−
−
−
−
−
TYP.
−
120
0.4
0.4
0.3
9
17
10
14
1.2
1.6
1.9
4
10
BFS505
MAX.
50
250
−
−
−
−
−
−
−
1.7
2.1
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
maximum unilateral power gain I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
(note 1)
T
amb
= 25
°C
I
C
= 5 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
°C
S
21
2
F
insertion power gain
noise figure
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
f = 2 GHz; T
amb
= 25
°C
P
L1
ITO
Notes
output power at 1 dB gain
compression
third order intercept point
I
c
= 5 mA; V
CE
= 6 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C
note 2
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
2. I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p−q)
= 898 MHz and at f
(2p−q)
= 904 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
MRC020 - 1
MRC019
200
handbook, halfpage
Ptot
(mW)
150
handbook, halfpage
200
h FE
150
100
100
50
50
0
0
50
100
150
Ts (
o
C)
200
0
10
−3
10
−2
10
−1
1
10
10
2
I C (mA)
V
CE
= 6 V; T
j
= 25
°C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
MRC011
handbook,
0.5
halfpage
C re
(pF)
handbook, halfpage
f
12
MRC013
0.4
T
(GHz)
10
VCE = 8 V
3V
8
0.3
6
0.2
4
0.1
2
0
0
2
4
6
8
10
VCB (V)
0
10
−1
1
10
I C (mA)
10
2
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
September 1995
5
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