SSM6H19NU
Composite Devices
Silicon N-Channel MOS/Epitaxial Schottky Barrier
SSM6H19NU
1. Applications
•
DC-DC Converters
2. Features
(1)
N-channel MOSFET and a schottky barrier diode in one package.
2.1. MOSFET Features
(1)
(2)
Low drain-source on-resistance
: R
DS(ON)
= 160 mΩ (typ.) (@V
GS
= 3.6 V)
1.8-V gate drive voltage.
2.2. Diode Features
(1)
Low forward voltage: V
F
= 0.51 V (typ.) (@I
F
= 500 mA)
3. Packaging and Internal Circuit
1.Anode
2.NC
3.Drain
4.Source
5.Gate
6.Cathode
UDFN6
4. Absolute Maximum Ratings (Note)
4.1. Absolute Maximum Ratings of the MOSFET
(Unless otherwise specified, T
a
= 25
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain current (pulsed)
Channel temperature
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
T
ch
Rating
40
±12
2.0
4.0
150
A
Unit
V
Note 1: Ensure that the channel temperature does not exceed 150
.
Start of commercial production
1
2013-12
2014-03-12
Rev.2.0
SSM6H19NU
4.2. Absolute Maximum Ratings of the Diode (Unless otherwise specified, T
a
= 25
)
Characteristics
Reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Junction temperature
(t = 10 ms)
Symbol
V
R
I
O
I
FSM
T
j
Rating
40
500
5
125
Unit
V
mA
A
4.3. Absolute Maximum Ratings of the Common Section
(Unless otherwise specified, T
a
= 25
)
Characteristics
Power dissipation
Power dissipation
Storage temperature
(t = 10 s)
(Note 1)
(Note 1)
T
stg
Symbol
P
D
Rating
1
2
-55 to 150
Unit
W
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: P
D
for the entire IC
Device mounted on a 25.4 mm
×
25.4 mm
×
1.6 mm FR-4 glass epoxy board (Cu pad: 645 mm
2
)
Note:
Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, R
th(ch-a)
, and the drain power dissipation, P
D
, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2
2014-03-12
Rev.2.0
SSM6H19NU
5. Electrical Characteristics
5.1. Static Characteristics of the MOSFET (Unless otherwise specified, T
a
= 25
)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 2)
(Note 3)
Symbol
I
GSS
I
DSS
Test Condition
V
GS
=
±10
V, V
DS
= 0 V
V
DS
= 40 V, V
GS
= 0 V
Min
40
25
0.5
Typ.
145
155
156
160
180
220
2
Max
±10
1
1.2
185
198
201
208
238
390
S
mΩ
V
Unit
µA
V
(BR)DSS
I
D
= 1 mA, V
GS
= 0 V
(Note 1) V
(BR)DSX
I
D
= 1 mA, V
GS
= -12 V
V
th
V
DS
= 3 V, I
D
= 1 mA
I
D
= 1.0 A, V
GS
= 4.5 V
I
D
= 1.0 A, V
GS
= 4.2 V
I
D
= 1.0 A, V
GS
= 3.6 V
I
D
= 0.5 A, V
GS
= 2.5 V
I
D
= 0.2 A, V
GS
= 1.8 V
R
DS(ON)
I
D
= 1.0 A, V
GS
= 8.0 V
Forward transfer admittance
(Note 3)
|Y
fs
|
V
DS
= 3 V, I
D
= 200 mA
Note 1: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (1 mA for
this device). Then, for normal switching operation, V
GS(ON)
must be higher than V
th
, and V
GS(OFF)
must be
lower than V
th
. This relationship can be expressed as: V
GS(OFF)
< V
th
< V
GS(ON)
.
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2. Dynamic Characteristics of the MOSFET (Unless otherwise specified, T
a
= 25
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
on
t
off
V
DD
= 10 V, I
D
= 0.5 A,
V
GS
= 0 V to 2.5 V, R
G
= 4.7
Ω,
See Figure 5.2.1, 5.2.2.
Test Condition
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
130
7.5
26
13
8
Max
ns
Unit
pF
Fig. 5.2.1 Test Circuit of Switching Time
Fig. 5.2.2 Input Waveform/Output Waveform
3
2014-03-12
Rev.2.0
SSM6H19NU
5.3. Gate Charge Characteristics of the MOSFET
(Unless otherwise specified, T
a
= 25
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Symbol
Q
g
Test Condition
V
DD
= 10 V, I
D
= 1.8 A
V
GS
= 4.2 V
V
DD
= 10 V, I
D
= 1.8 A
V
GS
= 3.6 V
V
DD
= 10 V, I
D
= 1.8 A
V
GS
= 2.5 V
Min
Typ.
1.1
1.0
0.75
Max
2.2
2.0
1.5
Unit
nC
5.4. Source-Drain Characteristics of the MOSFET
(Unless otherwise specified, T
a
= 25
)
Characteristics
Diode forward voltage
(Note 1)
Symbol
V
DSF
Test Condition
I
D
= -2.0 A, V
GS
= 0 V
Min
Typ.
-0.85
Max
-1.2
Unit
V
Note 1: Pulse measurement.
4
2014-03-12
Rev.2.0
SSM6H19NU
5.5. Characteristics of the Diode (Unless otherwise specified, T
a
= 25
)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
V
F(1)
V
F(2)
I
R
C
t
Test Condition
I
F
= 100 mA
I
F
= 500 mA
V
R
= 40 V
V
R
= 0 V, f = 1 MHz
Min
Typ.
0.31
0.51
42
Max
0.35
0.57
50
µA
pF
Unit
V
6. Marking
Fig. 6.1 Marking
Fig. 6.2 Pin Condition(Top View)
5
2014-03-12
Rev.2.0
单片机
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