merging Memory & Logic Solutions Inc.
Document Title
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM620FV8AT Series
Low Power, 256Kx8 SRAM
Revision History
Revision No.
0.0
0.1
History
Initial Draft
1’st Revision
I
CC2
value change ( @70ns product : 20mA -> 25mA )
( @55ns product : 25mA -> 30mA )
I
SB1
Max. value changed from 5uA to 15uA.
I
SB1
Typ. value deleted.
I
DR
Max. value changed to 5uA.
I
DR
Typ. value deleted.
Draft Date
May 31 , 2004
Dec 14 , 2004
Remark
0.2
2’nd Revision
Jan 4 , 2005
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
Zip Code : 690-719
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
Rev 0.2
merging Memory & Logic Solutions Inc.
FEATURES
•
•
•
•
•
•
Process Technology : 0.15µm Full CMOS
Organization : 256K x 8 bit
Power Supply Voltage : 2.7V ~ 3.6V
Low Data Retention Voltage : 1.5V(Min)
Three state output and TTL Compatible
Package Type : 32-TSOP1
EM620FV8AT Series
Low Power, 256Kx8 SRAM
GENERAL DESCRIPTION
The EM620FV8AT families are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The fami-
lies also supports low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Industrial
(-40 ~ 85
o
C)
Vcc
Range
Speed
Standby
(I
SB1
, Max)
15
µA
Operating
(I
CC1
.Max)
3 mA
PKG Type
EM620FV8AT
2.7V~3.6V
55
1)
/ 70ns
32 TSOP1
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
A11
A9
A8
A13
WE
CS2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
OE
A10
CS1
IO8
IO7
IO6
IO5
IO4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
Row S elect
32 - TSOP
Type1 - Forward
26
25
24
23
22
21
20
19
18
17
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
V
C
C
V
SS
Memory Array
1024 x 2048
I/O1 ~ I/O8
Data
Cont
I/O Circuit
Column Select
Name
CS
1
,CS
2
OE
A
0
~A
17
I/O
1
~I/O
8
Function
Chip select inputs
Output Enable input
Address Inputs
Data Inputs/outputs
Name
WE
Vcc
Vss
NC
Function
A A
11
A
12
A
13
A A
15
A A
10
14
16 17
Write Enable input
Power Supply
Ground
No Connection
WE
OE
C 1
S
C 2
S
Control Logic
2
Rev 0.2
merging Memory & Logic Solutions Inc.
ABSOLUTE MAXIMUM RATINGS *
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Operating Temperature
EM620FV8AT Series
Low Power, 256Kx8 SRAM
Symbol
V
IN
, V
OUT
V
CC
P
D
T
A
Ratings
-0.2 to Vcc+0.3 (Max. 4.0V)
-0.2 to 4.0V
1.0
-40 to 85
Unit
V
V
W
o
C
*
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
FUNCTIONAL DESCRIPTION
CS
1
H
X
L
L
L
CS
2
X
L
H
H
H
OE
X
X
H
L
X
WE
X
X
H
H
L
I/O
High-Z
High-Z
High-Z
Data Out
Data In
Mode
Deselected
Deselected
Output Disabled
Read
Write
Power
Stand by
Stand by
Active
Active
Active
Note: X means don’t care. (Must be low or high state)
3
Rev 0.2
merging Memory & Logic Solutions Inc.
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
EM620FV8AT Series
Low Power, 256Kx8 SRAM
Symbol
V
CC
V
SS
V
IH
V
IL
Min
2.7
0
2.2
-0.2
3)
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+ 0.2
2)
0.6
Unit
V
V
V
V
TA= -40 to 85
o
C, otherwise specified
Overshoot: V
CC
+2.0 V in case of pulse width < 20ns
Undershoot: -2.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested
.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current (TTL)
V
OL
V
OH
I
SB
V
IN
=V
SS
to V
CC
CS
1
= V
IH
, CS
2
=V
IL
or OE=V
IH
or WE=V
IL
, V
IO
= V
SS
to V
CC
I
IO
=0mA, CS
1
=V
IL
, CS
2
=WE = V
IH
, V
I N
=V
I H
or V
IL
Cycle time=1µs, 100% duty, I
IO
=0mA,
CS
1
< 0.2V, CS
2
>V
CC
-0.2V,
V
IN
< 0.2V or V
IN
>V
CC
-0.2V
Cycle time = Min, I
IO
=0mA, 100% duty,
CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IL
or V
I H
I
OL
= 2.1mA
I
O H
= -1.0mA
CS
1
= V
IH
, CS
2
=V
IL
, Other inputs=V
IH
or V
IL
CS
1
>V
CC
-0.2V, CS
2
>V
C C
-0.2V (CS
1
controlled)
or 0V<CS
2
<0.2V (CS
2
controlled),
Other inputs=0~V
CC
(Max. condition : V
CC
=3.6V @ 85
o
C)
Test Conditions
Min
-1
-1
-
-
55ns
70ns
-
-
-
2.4
-
Typ
-
-
-
-
-
-
-
-
-
Max
1
1
3
3
30
25
0.4
-
0.3
Unit
µA
µA
mA
mA
mA
V
V
mA
Standby Current (CMOS)
I
SB1
LL
LF
-
-
15
µA
4
Rev 0.2
merging Memory & Logic Solutions Inc.
AC OPERATING CONDITIONS
Test Conditions (Test
Load and Test Input/Output Reference)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL = 100pF+ 1 TTL
30pF + 1 TTL
1. Including scope and Jig capacitance
2. R
1
=3070Ω
,
R
2
=3150Ω
3. V
TM
=2.8V
CL
1)
=
EM620FV8AT Series
Low Power, 256Kx8 SRAM
V
TM 3)
R
12)
CL
1)
R
22)
READ CYCLE
(V
cc
=2.7 to 3.6V, Gnd = 0V, T
A
= -40
o
C to +85
o
C)
Parameter
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Symbol
t
RC
t
AA
t
co1,
t
co2
t
O E
t
LZ1,
t
LZ2
t
OLZ
t
HZ1,
t
HZ2
t
OHZ
t
OH
55ns
Min
55
-
-
-
10
5
0
0
10
Max
-
55
55
25
-
-
20
20
-
Min
70
-
-
-
10
5
0
0
10
70ns
Max
-
70
70
35
-
-
25
25
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE
(V
cc
=2.7 to 3.6V, Gnd = 0V, T
A
= -40
o
C to +85
o
C)
Parameter
Write cycle time
Chip select to end of write
Address setup time
Address valid to end of write
Write pulse width
Write recovery time
Write to ouput high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Symbol
t
WC
t
CW1,
t
CW2
t
As
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
55ns
Min
55
45
0
45
40
0
0
25
0
5
-
-
Max
-
-
-
-
-
-
20
Min
70
60
0
60
50
0
0
30
0
5
70ns
Max
-
-
-
-
-
-
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
-
-
ns
ns
5
Rev 0.2
DIY/开源硬件专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
