Power Field-Effect Transistor, 1-Element, Silicon, TO-205AD,
| 参数名称 | 属性值 |
| 厂商名称 | TEMIC |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95代码 | TO-205AD |
| JESD-30 代码 | O-MBCY-W3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| VP0808B-1 | VP1008B-2 | VP0808LTR | VP0808L-18 | VP1008LR | VP1008LA | VP1008L-18 | VP0808B-2 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 1-Element, Silicon, TO-205AD, | Power Field-Effect Transistor, 1-Element, Silicon, TO-205AD, | Small Signal Field-Effect Transistor, 0.28A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, | Small Signal Field-Effect Transistor, 0.28A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, | Small Signal Field-Effect Transistor, 0.28A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Small Signal Field-Effect Transistor, 0.28A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Small Signal Field-Effect Transistor, 0.28A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Power Field-Effect Transistor, 1-Element, Silicon, TO-205AD, |
| Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95代码 | TO-205AD | TO-205AD | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-205AD |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-MBCY-W3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | METAL | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | TEMIC | - | TEMIC | TEMIC | TEMIC | TEMIC | TEMIC | TEMIC |
| 最小漏源击穿电压 | - | - | 80 V | 80 V | 100 V | 100 V | 100 V | - |
| 最大漏极电流 (ID) | - | - | 0.28 A | 0.28 A | 0.28 A | 0.28 A | 0.28 A | - |
| 最大漏源导通电阻 | - | - | 5 Ω | 5 Ω | 5 Ω | 5 Ω | 5 Ω | - |
| FET 技术 | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| 最大反馈电容 (Crss) | - | - | 25 pF | 25 pF | 25 pF | 25 pF | 25 pF | - |
| 工作模式 | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 极性/信道类型 | - | - | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | - |
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