IC INSTRUMENTATION AMPLIFIER, 600 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Instrumentation Amplifier
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Linear ( ADI ) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 8 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 放大器类型 | INSTRUMENTATION AMPLIFIER |
| 最大平均偏置电流 (IIB) | 0.00004 µA |
| 标称带宽 (3dB) | 2 MHz |
| 最小共模抑制比 | 84 dB |
| 最大输入失调电压 | 600 µV |
| JESD-30 代码 | R-PDIP-T8 |
| JESD-609代码 | e0 |
| 标称负供电电压 (Vsup) | -15 V |
| 最大非线性 | 0.0014% |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 座面最大高度 | 3.937 mm |
| 标称压摆率 | 21 V/us |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 最大电压增益 | 100 |
| 最小电压增益 | 10 |
| 宽度 | 7.62 mm |
| LTC1102ACN8 | LTC1101ACN8#PBF | LTC1101ACN8 | LTC1101ACJ8 | LTC1102ACN8#PBF | |
|---|---|---|---|---|---|
| 描述 | IC INSTRUMENTATION AMPLIFIER, 600 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Instrumentation Amplifier | IC INSTRUMENTATION AMPLIFIER, 160 uV OFFSET-MAX, 0.022 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Instrumentation Amplifier | IC INSTRUMENTATION AMPLIFIER, 160 uV OFFSET-MAX, 0.022 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Instrumentation Amplifier | IC INSTRUMENTATION AMPLIFIER, 160 uV OFFSET-MAX, 0.022 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Instrumentation Amplifier | IC INSTRUMENTATION AMPLIFIER, 600 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Instrumentation Amplifier |
| 是否Rohs认证 | 不符合 | 符合 | 不符合 | 不符合 | 符合 |
| 厂商名称 | Linear ( ADI ) | Linear ( ADI ) | Linear ( ADI ) | Linear ( ADI ) | Linear ( ADI ) |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | DIP, | DIP, | DIP, | CERAMIC, DIP-8 | DIP, |
| 针数 | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | compli | compliant | compliant | compliant | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 放大器类型 | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER |
| 最大平均偏置电流 (IIB) | 0.00004 µA | 0.008 µA | 0.008 µA | 0.008 µA | 0.00004 µA |
| 标称带宽 (3dB) | 2 MHz | 0.022 MHz | 0.022 MHz | 0.022 MHz | 2 MHz |
| 最小共模抑制比 | 84 dB | 95 dB | 95 dB | 95 dB | 84 dB |
| 最大输入失调电压 | 600 µV | 160 µV | 160 µV | 160 µV | 600 µV |
| JESD-30 代码 | R-PDIP-T8 | R-PDIP-T8 | R-PDIP-T8 | R-GDIP-T8 | R-PDIP-T8 |
| JESD-609代码 | e0 | e3 | e0 | e0 | e3 |
| 最大非线性 | 0.0014% | 0.0008% | 0.0008% | 0.0008% | 0.0014% |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 3.937 mm | 3.937 mm | 3.937 mm | 5.08 mm | 3.937 mm |
| 标称压摆率 | 21 V/us | 0.06 V/us | 0.06 V/us | 0.06 V/us | 21 V/us |
| 标称供电电压 (Vsup) | 15 V | 5 V | 5 V | 5 V | 15 V |
| 表面贴装 | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | TIN LEAD | MATTE TIN | TIN LEAD | Tin/Lead (Sn/Pb) | MATTE TIN |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 最大电压增益 | 100 | 100 | 100 | 100 | 100 |
| 最小电压增益 | 10 | 10 | 10 | 10 | 10 |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| 是否无铅 | 含铅 | 不含铅 | 含铅 | - | 不含铅 |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | 250 | NOT SPECIFIED | - | 250 |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
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