BT138 series D and E
12 A four-quadrant triacs, sensitive gate
Rev. 02 — 12 March 2008
Product data sheet
1. Product profile
1.1 General description
Passivated sensitive gate triac in a SOT78 plastic package.
1.2 Features
I
Very sensitive gate
I
Direct interfacing to logic level ICs
I
Gate triggering in four quadrants
I
Direct interfacing to low power gate drive
circuits
1.3 Applications
I
General purpose switching and phase
control
I
230 V lamp dimmers
1.4 Quick reference data
I
I
I
I
I
I
V
DRM
≤
600 V (BT138-600D)
V
DRM
≤
600 V (BT138-600E)
V
DRM
≤
800 V (BT138-800E)
I
GT
≤
5 mA (BT138-600D)
I
GT
≤
10 mA (BT138-600E)
I
GT
≤
10 mA (BT138-800E)
I
I
I
I
I
I
T(RMS)
≤
12 A
I
TSM
≤
95 A (t = 20 ms)
I
GT
≤
10 mA (T2− G+) (BT138-600D)
I
GT
≤
25 mA (T2− G+) (BT138-600E)
I
GT
≤
25 mA (T2− G+) (BT138-800E)
NXP Semiconductors
BT138 series D and E
12 A four-quadrant triacs, sensitive gate
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; main terminal 2 (T2)
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 2.
Ordering information
Package
Name
BT138-600D
BT138-600E
BT138-800E
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
BT138-600D
BT138-600E
BT138-800E
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
mb
≤
99
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
I
2
t for fusing
t
p
= 10 ms
-
-
-
95
105
45
A
A
A
2
s
[1]
[1]
Conditions
Min
-
-
-
-
Max
600
600
800
12
Unit
V
V
V
A
BT138_SER _D_E_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 12 March 2008
2 of 12
NXP Semiconductors
BT138 series D and E
12 A four-quadrant triacs, sensitive gate
Table 3.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
dI
T
/dt
Parameter
rate of rise of on-state current
Conditions
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
Min
Max
Unit
-
-
-
-
-
-
50
50
50
10
2
5
0.5
+150
125
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
20
P
tot
(W)
15
003aac220
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
I
T(RMS)
(A)
14
α
= conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
BT138_SER _D_E_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 12 March 2008
3 of 12
NXP Semiconductors
BT138 series D and E
12 A four-quadrant triacs, sensitive gate
100
I
TSM
(A)
80
003aac217
60
40
I
T
I
TSM
t
1/f
T
j(init)
= 25
°C
max
20
0
1
10
10
2
10
3
number of cycles
10
4
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
3
I
TSM
(A)
I
T
003aac221
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
2
(1)
(2)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤
20 ms
(1) dI
T
/dt limit
(2) T2− G+ quadrant limit
Fig 3.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT138_SER _D_E_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 12 March 2008
4 of 12
NXP Semiconductors
BT138 series D and E
12 A four-quadrant triacs, sensitive gate
50
I
T(RMS)
(A)
40
003aac218
15
I
T(RMS)
(A)
003aac215
10
30
20
5
10
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
mb
(°C)
f = 50 Hz
T
mb
= 99
°C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of
mounting base temperature; maximum values
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
-
60
Max
1.5
-
Unit
K/W
K/W
thermal resistance from junction to full cycle; see
Figure 6
mounting base
thermal resistance from junction to full cycle; in free air
ambient
10
Z
th(j-mb)
(K/W)
1
003aab762
10
−1
P
10
−2
tp
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse width
BT138_SER _D_E_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 12 March 2008
5 of 12
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