DDR DRAM, 16MX32, CMOS, PBGA134, FBGA-134
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Integrated Silicon Solution ( ISSI ) |
包装说明 | TFBGA, |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
其他特性 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM |
JESD-30 代码 | R-PBGA-B134 |
JESD-609代码 | e1 |
长度 | 11.5 mm |
内存密度 | 536870912 bi |
内存集成电路类型 | DDR DRAM |
内存宽度 | 32 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 134 |
字数 | 16777216 words |
字数代码 | 16000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 16MX32 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TFBGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | 260 |
座面最大高度 | 1.1 mm |
自我刷新 | YES |
最大供电电压 (Vsup) | 1.3 V |
最小供电电压 (Vsup) | 1.14 V |
标称供电电压 (Vsup) | 1.2 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL |
端子节距 | 0.65 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | 10 |
宽度 | 10 mm |
IS46LD32160A-18BLA1 | IS43LD32160A-18BLI | IS46LD32160A-18BLA2 | IS46LD32160A-18BPLA1 | IS46LD32160A-18BPLA2 | IS46LD32160A-25BPLA2 | IS46LD32160A-3BPLA1 | IS46LD32160A-3BPLA2 | |
---|---|---|---|---|---|---|---|---|
描述 | DDR DRAM, 16MX32, CMOS, PBGA134, FBGA-134 | DDR DRAM, 16MX32, CMOS, PBGA134, FBGA-134 | DDR DRAM, 16MX32, CMOS, PBGA134, FBGA-134 | DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 | DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 | DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 | DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 | DDR DRAM, 16MX32, CMOS, PBGA168, FBGA-168 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
包装说明 | TFBGA, | TFBGA, | TFBGA, | VFBGA, | VFBGA, | VFBGA, | VFBGA, | VFBGA, |
Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
其他特性 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM |
JESD-30 代码 | R-PBGA-B134 | R-PBGA-B134 | R-PBGA-B134 | S-PBGA-B168 | S-PBGA-B168 | S-PBGA-B168 | S-PBGA-B168 | S-PBGA-B168 |
JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 | e1 | e1 |
长度 | 11.5 mm | 11.5 mm | 11.5 mm | 12 mm | 12 mm | 12 mm | 12 mm | 12 mm |
内存密度 | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 134 | 134 | 134 | 168 | 168 | 168 | 168 | 168 |
字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
字数代码 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
组织 | 16MX32 | 16MX32 | 16MX32 | 16MX32 | 16MX32 | 16MX32 | 16MX32 | 16MX32 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | TFBGA | TFBGA | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | 260 | NOT SPECIFIED | 260 | 260 | 260 | 260 | 260 | 260 |
座面最大高度 | 1.1 mm | 1.1 mm | 1.1 mm | 0.95 mm | 0.95 mm | 0.95 mm | 0.95 mm | 0.95 mm |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V |
最小供电电压 (Vsup) | 1.14 V | 1.14 V | 1.14 V | 1.14 V | 1.14 V | 1.14 V | 1.14 V | 1.14 V |
标称供电电压 (Vsup) | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.65 mm | 0.65 mm | 0.65 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 10 | NOT SPECIFIED | 10 | 10 | 10 | 10 | 10 | 10 |
宽度 | 10 mm | 10 mm | 10 mm | 12 mm | 12 mm | 12 mm | 12 mm | 12 mm |
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