Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28
| 参数名称 | 属性值 |
| 厂商名称 | Mitsubishi(日本三菱) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 28 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 最长访问时间 | 55 ns |
| JESD-30 代码 | R-PDIP-T28 |
| 长度 | 36.7 mm |
| 内存密度 | 262144 bi |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 32KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.5 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| M5M256DP-55XL-I | M5M256DP-70LL-I | M5M256DP-55LL-I | M5M256DP-70XL-I | M5M256DP-45XL-I | M5M256DP-45LL-I | |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28 | Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, DIP-28 | Standard SRAM, 32KX8, 55ns, CMOS, PDIP28, 0.600 INCH, DIP-28 | Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, DIP-28 | Standard SRAM, 32KX8, 45ns, CMOS, PDIP28, 0.600 INCH, DIP-28 | Standard SRAM, 32KX8, 45ns, CMOS, PDIP28, 0.600 INCH, DIP-28 |
| 厂商名称 | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 55 ns | 70 ns | 55 ns | 70 ns | 45 ns | 45 ns |
| JESD-30 代码 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 |
| 长度 | 36.7 mm | 36.7 mm | 36.7 mm | 36.7 mm | 36.7 mm | 36.7 mm |
| 内存密度 | 262144 bi | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.5 mm | 5.5 mm | 5.5 mm | 5.5 mm | 5.5 mm | 5.5 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm |
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