EEPROM, 2KX8, 250ns, Parallel, CMOS, PDIP28
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Vishay(威世) |
| 包装说明 | DIP, DIP28,.6 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 250 ns |
| 命令用户界面 | NO |
| 数据轮询 | YES |
| 耐久性 | 100000 Write/Erase Cycles |
| JESD-30 代码 | R-PDIP-T28 |
| JESD-609代码 | e0 |
| 内存密度 | 16384 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 端子数量 | 28 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 2KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 就绪/忙碌 | YES |
| 最大待机电流 | 0.0001 A |
| 最大压摆率 | 0.03 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 切换位 | NO |
| 最长写入周期时间 (tWC) | 1 ms |
| 28C17-25I/P | 28C17-25I/D | 28C17-25I/J | 28C17-25I/K | 28C17-25I/L | 28C17-25I/S | 28C17-25I/W | 28C16-15M/W | |
|---|---|---|---|---|---|---|---|---|
| 描述 | EEPROM, 2KX8, 250ns, Parallel, CMOS, PDIP28 | EEPROM, 2KX8, 250ns, Parallel, CMOS, CDIP28 | EEPROM, 2KX8, 250ns, Parallel, CMOS, CDIP28 | EEPROM, 2KX8, 250ns, Parallel, CMOS, CQCC32 | EEPROM, 2KX8, 250ns, Parallel, CMOS, PQCC32 | EEPROM, 2KX8, 250ns, Parallel, CMOS | EEPROM, 2KX8, 250ns, Parallel, CMOS | EEPROM, 2KX8, 150ns, Parallel, CMOS |
| 包装说明 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | QCCN, LCC32,.45X.55 | QCCJ, LDCC32,.5X.6 | , DIE OR CHIP | , WAFER | , WAFER |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最长访问时间 | 250 ns | 250 ns | 250 ns | 250 ns | 250 ns | 250 ns | 250 ns | 150 ns |
| 命令用户界面 | NO | NO | NO | NO | NO | NO | NO | NO |
| 数据轮询 | YES | YES | YES | YES | YES | YES | YES | YES |
| 耐久性 | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles |
| 内存密度 | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 字数 | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
| 字数代码 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 125 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -55 °C |
| 组织 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 |
| 封装等效代码 | DIP28,.6 | DIP28,.6 | DIP28,.6 | LCC32,.45X.55 | LDCC32,.5X.6 | DIE OR CHIP | WAFER | WAFER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A |
| 最大压摆率 | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | MILITARY |
| 切换位 | NO | NO | NO | NO | NO | NO | NO | NO |
| 最长写入周期时间 (tWC) | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | - | - | - |
| 厂商名称 | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) | - |
| JESD-30 代码 | R-PDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XQCC-N32 | R-PQCC-J32 | - | - | - |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | - | - | - |
| 端子数量 | 28 | 28 | 28 | 32 | 32 | - | - | - |
| 封装主体材料 | PLASTIC/EPOXY | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY | - | - | - |
| 封装代码 | DIP | DIP | DIP | QCCN | QCCJ | - | - | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - | - |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | - | - | - |
| 就绪/忙碌 | YES | YES | YES | YES | YES | YES | YES | - |
| 表面贴装 | NO | NO | NO | YES | YES | - | - | - |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - | - |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | J BEND | - | - | - |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | - | - | - |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | QUAD | - | - | - |
机器人开发
汽车电子
下载中心专版
嵌入式系统
模拟电子
单片机
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
