MCC
Features
•
•
omponents
21201 Itasca Street Chatsworth
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MMBT3906
Surface Mount SOT-23 Package
Capable of 350mWatts of Power Dissipation
C
Pin Configuration
Top View
PNP General
Purpose Amplifier
SOT-23
A
D
2A
B
E
Min
40
40
5.0
50
50
Max
Units
Vdc
Vdc
Vdc
nAdc
nAdc
G
H
J
F
E
C
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Base Cutoff Current
(V
CE
=30Vdc, V
BE
=3.0Vdc)
Collector Cutoff Current
(V
CE
=30Vdc, V
BE
=3.0Vdc)
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=1.0Vdc)
(I
C
=1.0mAdc, V
CE
=1.0Vdc)
(I
C
=10mAdc, V
CE
=1.0Vdc)
(I
C
=50mAdc, V
CE
=1.0Vdc)
(I
C
=100mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
(I
C
=50mAdc, I
B
=5.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=10mAdc, I
B
=1.0mAdc)
(I
C
=50mAdc, I
B
=5.0mAdc)
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=20Vdc, f=100MHz)
Output Capacitance
(V
CB
=5.0Vdec, I
E
=0, f=1.0MHz)
Input Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
Noise Figure
(I
C
=100µAdc, V
CE
=5.0Vdc, R
S
=1.0kΩ
f=10Hz to 15.7kHz)
Delay Time
(V
CC
=3.0Vdc, V
BE
=0.5Vdc
Rise Time
I
C
=10mAdc, I
B1
=1.0mAdc)
Storage Time
(V
CC
=3.0Vdc, I
C
=10mAdc
Fall Time
I
B1
=I
B2
=1.0mAdc)
≤
300µs, Duty Cycle
≤
2.0%
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
ON CHARACTERISTICS
h
FE
K
60
80
100
60
30
DIMENSIONS
300
V
CE(sat)
0.25
0.4
0.65
0.85
0.95
Vdc
V
BE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF
250
4.5
10.0
4.0
MHz
pF
pF
dB
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
*Pulse Width
35
35
225
75
ns
ns
ns
ns
.037
.950
.037
.950
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MMBT3906
DC Current Gain vs Collector Current
220
V
CE
= 1.0V
200
160
h
FE
120
80
40
V
BE(ON)
- (V)
0.6
0.4
0.2
0
0.1
T
A
= 100°C
1.2
1.0
0.8
T
A
= 25°C
MCC
Base-Emitter ON Voltage vs
Collector Current
V
CE
= 5.0V
0.1
1
I
C
(mA)
10
100
1.0
I
C
- (mA)
10
100
Collector-Emitter Saturation
Volatge vs Collector Current
0.6
0.5
0.4
V
CE(SAT)
- (V)
0.3
0.2
0.1
0
1.0
V
BE(SAT)
- (V)
I
C
/I
B
= 10
T
A
= 25°C
1.4
1.2
1.0
0.8
0.6
0.4
Base-Emitter Saturation
Voltage vs Collector Current
I
C
/I
B
= 10
T
A
= 25°C
10
I
C
- (mA)
100
1000
0.2
1.0
10
I
C
- (mA)
100
1000
Collector-Base Diode Reverse
Current vs Temperature
100
Common Base Open Circuit Input and
Output Capacitance vs Reverse Bias Voltage
1.0
C
OBO
T
A
= 25°C
TO-92
8
V
CB
= 20V
10
I
CBO
- (mA)
1.0
2
0.1
0
25
50
75
T
J
- (°C)
100
125
150
0
0.1
pF
6
C
IBO
4
1.0
Volts - (V)
10
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MMBT3906
Maximum Power Dissipation vs
Ambient Temperature
800
12
10
600
TO-92
P
D(MAX)
- (mW)
400
NF - (dB)
6
8
I
C
= 1.0mA
Noise Figure vs
Source Resistance
MCC
V
CE
= 5.0V
f = 1.0kHz
I
C
= 100µA
4
200
SOT-23
0
0
50
100
T
A
- (°C)
Contours of Constant Gain
Bandwidth Product (f
T
)
24
20
16
V
CE
- (V) 12
8
4
0
0.1
10
0.1
h
fe
100
1000
150
200
2
0
0.1
1.0
10
R
S
- (kΩ)
100
Current Gain
V
CE
= 10V
f = 1.0kHz
1.0
10
100
1.0
I
C
- (mA)
10
I
C
- (mA)
*100MHz increments from 100
to 700, 750 and 800MHz
Noise Figure vs
Frequency
6
V
CE
= 5.0V
5
Switching Times vs
Collector Current
1000
I
B1
= I
B2
= I
C
/10
t
s
4
NF - (dB)
3
2
I
C
= 1.0mA R
S
= 200Ω
1
0
I
C
= 100µA R
S
= 2.0kΩ
I
C
= 100µA R
S
= 200Ω
T - (ns)
100
t
f
10
t
r
t
d
0.1
1.0
f - (kHz)
10
100
1.0
1.0
10
I
C
- (mA)
100
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