BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal
Transistor
SOT-23
3 Collector
A
F
1 Base
2 Emitter
B
E
C
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
D
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Dimensions
A
B
C
D
E
F
Unit (mm)
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
3.00
1.40
0.50
2.00
2.55
1.20
Unit (inch)
Min
0.110
0.047
0.012
0.071
0.089
0.035
Max
0.118
0.055
0.020
0.079
0.100
0.043
Ordering Information
Package
Part No.
Packing
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
Marking
1A
1B
1E
1F
1G
1J
1K
1L
1A
1B
1E
1F
1G
1J
1K
1L
SOT-23 BC846A RF
SOT-23 BC846B RF
SOT-23 BC847A RF
SOT-23 BC847B RF
SOT-23 BC847C RF
SOT-23 BC848A RF
SOT-23 BC848B RF
SOT-23 BC848C RF
SOT-23 BC846A RFG
SOT-23 BC846B RFG
SOT-23 BC847A RFG
SOT-23 BC847B RFG
SOT-23 BC847C RFG
SOT-23 BC848A RFG
SOT-23 BC848B RFG
SOT-23 BC848C RFG
Suggested PAD Layout
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
Symbol
P
D
Value
250
80
50
30
65
45
30
6
6
5
0.1
-55 to + 150
Units
mW
V
V
V
A
°C
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
STG
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version :
E11
BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal
Transistor
Electrical Characteristics
Type Number
Collector-Base Breakdown Voltage
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
I
C
= 10μA
I
C
= 10mA
I
E
= 1μA
V
CB
= 30V
V
EB
= 5V
V
CE
= 5V
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
I
C
=0
I
C
= 2mA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Min
80
50
30
65
45
30
6
6
5
-
-
110
200
420
-
-
100
Max
-
Units
V
Collector-Emitter Breakdown Voltage
-
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC current gain
-
15
0.1
220
450
800
0.5
1.1
-
V
nA
μA
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
V
CE
= 5V
I
C
= 100mA I
B
= 5mA
I
C
= 100mA I
B
= 5mA
I
C
= 10mA
f= 100MHz
V
V
MHz
Tape & Reel specification
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
d
T
A
C
B
P1
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
E
F
W
W1
D
D2
D1
Direction of Feed
Version :
E11
BC846A/B, BC847A/B/C, BC848A/B/C
250mW, NPN Small Signal Transistor
Small Signal
Transistor
Rating and Characteristic Curves
Figure1.
Static Characteristic
100
Figure 2. DC Current Gain
handbook, halfpage
400
MGT723
I
C
[mA], COLLECTOR CURRENT
80
I
B
= 400
µ
A
I
B
= 350
µ
A
I
B
= 300
µ
A
hFE
(1)
300
60
I
B
= 250
µ
A
I
B
= 200
µ
A
(2)
40
I
B
= 150
µ
A
I
B
= 100
µ
A
200
(3)
20
100
I
B
= 50
µ
A
0
0
4
8
12
16
20
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
10
−1
1
10
10
2
I C (mA)
10
3
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation
Voltage
handbook, halfpage
V
Figure 4. Base-Emitter On Voltage
100
I
C
[mA], COLLECTOR CURRENT
1200
BE
(mV)
1000
MGT724
V
CE
= 2V
(1)
10
800
(2)
600
(3)
1
400
200
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
−1
V
CE
= 5 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
1
10
10
2
I C (mA)
10
3
V
BE
[V], BASE-EMITTER VOLTAGE
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 5. Collector Output Capacitance
100
Figure 6. Current Gain Bandwidth Product
1000
f=1MHz
V
CE
=5V
C
ob
[pF], CAPACITANCE
10
100
1
10
0.1
1
10
100
1000
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Version :
E11
NXP MCU
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