IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5 V
35
7.1
25
Single
D
FEATURES
60
0.05
•
•
•
•
•
•
•
Advanced process technology
Surface mount (IRLZ34S, SiHLZ34S)
Low-profile through-hole (IRLZ34L, SiHLZ34L)
Available
175 °C operating temperature
Fast switching
Available
Fully avalanche rated
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ34L, SiHLZ34L) is available
for low-profile applications.
G
G
D
S
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D
2
PAK (TO-263)
SiHLZ34S-GE3
IRLZ34SPbF
I
2
PAK (TO-262)
-
IRLZ34LPbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 5 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
60
± 10
30
21
110
0.59
128
88
3.7
4.5
-55 to +175
300
W/°C
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, Starting T
J
= 25 °C, L = 285 μH, R
g
= 25
,
I
AS
= 30 A (see fig. 12).
c. I
SD
30 A, dI/dt
200 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. E, 18-Jan-16
Document Number: 90418
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thJC
MIN.
-
-
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB mount)
a
Maximum Junction-to-Case (Drain)
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
TEST CONDITIONS
V
GS
= 0, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 10 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 5 V
V
GS
= 4 V
I
D
= 18 A
b
I
D
= 15
A
b
MIN.
60
-
1.0
-
-
-
-
-
12
-
-
-
-
-
-
-
TYP.
-
0.07
-
-
-
-
-
-
-
1600
660
170
-
-
-
14
170
30
56
7.5
MAX.
-
-
2.0
± 100
25
250
0.05
0.07
-
-
-
-
35
7.1
25
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
DS
= 25 V, I
D
= 18 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 30 A, V
DS
= 48 V,
see fig. 6 and 13
b
pF
V
GS
= 5 V
nC
V
DD
= 30 V, I
D
= 30 A,
R
g
= 6
,
R
D
= 1
,
see fig. 10
b
Between lead,
and center of die contact
-
-
-
-
ns
nH
-
-
-
-
-
-
-
-
120
700
30
A
110
1.6
180
1300
V
ns
nC
G
S
T
J
= 25 °C, I
S
= 30 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 30 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S16-0015-Rev. E, 18-Jan-16
Document Number: 90418
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0015-Rev. E, 18-Jan-16
Document Number: 90418
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S16-0015-Rev. E, 18-Jan-16
Document Number: 90418
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
g
D.U.T.
+
- V
DD
5V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0015-Rev. E, 18-Jan-16
Document Number: 90418
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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