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IRLZ34STRR: 产品描述MOSFET N-CH 60V 30A D2PAK; 产品类别分立半导体晶体管; 文件大小389KB，共9页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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IRLZ34STRR概述

MOSFET N-CH 60V 30A D2PAK

IRLZ34STRR规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Vishay(威世)
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	220 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (Abs) (ID)	30 A
最大漏极电流 (ID)	30 A
最大漏源导通电阻	0.05 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2
湿度敏感等级	1
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	225
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	88 W
最大脉冲漏极电流 (IDM)	110 A
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

max. (nC)

(nC)

Configuration

= 5 V

7.1

Single

FEATURES

0.05

•

Advanced process technology

Surface mount (IRLZ34S, SiHLZ34S)

Low-profile through-hole (IRLZ34L, SiHLZ34L)

Available

175 °C operating temperature

Fast switching

Available

Fully avalanche rated

Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

PAK

(TO-262)

PAK (TO-263)

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are known for, provides the designer with

an extremely efficient and reliable device for use in a wide

variety of applications.

The D

PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

The through-hole version (IRLZ34L, SiHLZ34L) is available

for low-profile applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

PAK (TO-263)

SiHLZ34S-GE3

IRLZ34SPbF

PAK (TO-262)

IRLZ34LPbF

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Current

at 5 V

= 25 °C

= 100 °C

SYMBOL

= 25 °C

dV/dt

, T

stg

for 10 s

LIMIT

± 10

110

0.59

128

3.7

4.5

-55 to +175

300

W/°C

V/ns

°C

UNIT

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, Starting T

= 25 °C, L = 285 μH, R

= 25

,

= 30 A (see fig. 12).

c. I



30 A, dI/dt



200 A/μs, V



, T



175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-0015-Rev. E, 18-Jan-16

Document Number: 90418

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRLZ34STRR相似产品对比

	IRLZ34STRR	SIHLZ34L	SIHLZ34L-E3	SIHLZ34S	SIHLZ34S-GE3	IRLZ34L	IRLZ34LPBF	IRLZ34STRL
描述	MOSFET N-CH 60V 30A D2PAK	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	MOSFET N-CH 60V 30A D2PAK
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	,	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknow	unknow	unknow	unknow	unknown	compliant	unknown
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最大漏极电流 (Abs) (ID)	30 A	30 A	30 A	30 A	30 A	30 A	30 A	30 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	88 W	88 W	88 W	88 W	88 W	88 W	88 W	88 W
表面贴装	YES	NO	NO	YES	YES	NO	NO	YES
是否无铅	含铅	含铅	-	含铅	不含铅	-	不含铅	含铅
是否Rohs认证	不符合	不符合	-	不符合	符合	不符合	符合	不符合
针数	3	3	-	4	4	3	3	3
ECCN代码	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	AVALANCHE RATED	AVALANCHE RATED, HIGH RELIABILITY	-	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED
雪崩能效等级（Eas）	220 mJ	128 mJ	-	128 mJ	128 mJ	220 mJ	220 mJ	220 mJ
外壳连接	DRAIN	DRAIN	-	DRAIN	-	DRAIN	DRAIN	DRAIN
最小漏源击穿电压	60 V	60 V	-	60 V	60 V	60 V	60 V	60 V
最大漏极电流 (ID)	30 A	30 A	-	30 A	30 A	30 A	30 A	30 A
最大漏源导通电阻	0.05 Ω	0.05 Ω	-	0.05 Ω	0.05 Ω	0.05 Ω	0.05 Ω	0.05 Ω
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	-	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
元件数量	1	1	-	1	1	1	1	1
端子数量	2	3	-	2	2	3	3	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	-	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
峰值回流温度（摄氏度）	225	240	-	240	260	NOT SPECIFIED	NOT SPECIFIED	225
最大脉冲漏极电流 (IDM)	110 A	110 A	-	110 A	110 A	110 A	110 A	110 A
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
端子形式	GULL WING	THROUGH-HOLE	-	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
端子位置	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	30	-	30	40	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
零件包装代码	-	TO-262AA	-	D2PAK	D2PAK	TO-262AA	TO-262AA	-
JEDEC-95代码	-	TO-262AA	-	TO-263AB	TO-263AB	TO-262AA	TO-262AA	-

IRLZ34STRR

IRLZ34STRR概述

IRLZ34STRR规格参数

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