UNISONIC TECHNOLOGIES CO., LTD
MMBT3904
GENERAL PURPOSE
APPLIATION
FEATURES
* Collector-Emitter Voltage: V
CEO
=40V
* Collector Dissipation:
P
D(MAX)
=350mW
* Complementary to UTC MMBT3906
NPN EPITAXIAL SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBT3904L-AE3-R
MMBT3904G-AE3-R
MMBT3904L-AL3-R
MMBT3904G-AL3-R
MMBT3904L-AN3-R
MMBT3904G-AN3-R
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
1A.
L: Lead Free
G: Halogen Free
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R206-012.F
MMBT3904
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( T
A
=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
200
mA
Collector Dissipation
P
C
350
mW
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
V
CE(SAT)
1
Collector-Emitter Saturation Voltage (Note)
V
CE(SAT)
2
V
BE(SAT)
1
Base-Emitter Saturation Voltage (Note)
V
BE(SAT)
2
Collector Cut-Off Current
I
CEX
Base Cut-Off Current
I
BL
h
FE
1
h
FE
2
DC Current Gain (Note)
h
FE
3
h
FE
4
h
FE
5
Current Gain Bandwidth Product
f
T
Output Capacitance
C
OB
Turn On Time
t
ON
Turn Off Time
t
OFF
Note: Pulse test: PW<=300μs, Duty Cycle<=2%
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0 (Note)
I
E
=10μA, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=30V, V
EB
=3V
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
CC
=3V,V
BE
=0.5V,I
C
=10mA,I
B1
=1mA
I
B
1=1
B
2=1mA
MIN TYP MAX UNIT
60
V
40
V
6
V
0.2
V
0.3
V
0.65
0.85 V
0.95 V
50
nA
50
nA
40
70
100
300
60
30
300
MHz
4
pF
70
ns
250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-012.F
MMBT3904
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1 0.3 0.5 1
V
CE(sat)
I
C
=10 I
B
V
BE(sat)
6
5
4
3
2
1
3050 100
0
1
Current Gain-Bandwidth Product, f
T
(MHz)
DC Current Gain, h
FE
Output Capacitance
I
E
=0
f=1MHz
3 5 10
3
5
10
30 50 100
Collector current, I
C
(mA)
Collector-Base Voltage, V
CB
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-012.F
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