Datasheet> 器件分类 > 分立半导体> 晶体管> UK3919-TN3-T

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UK3919-TN3-T: 产品描述SWITCHING N-CHANNEL POWER MOSFET; 产品类别分立半导体晶体管; 文件大小326KB，共6页; 制造商UNISONIC TECHNOLOGIES CO.,LTD; 官网地址http://www.unisonic.com.tw/

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UK3919-TN3-T概述

SWITCHING N-CHANNEL POWER MOSFET

UK3919-TN3-T规格参数

参数名称	属性值
厂商名称	UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码	TO-252
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	4
Reach Compliance Code	compli
ECCN代码	EAR99
雪崩能效等级（Eas）	73 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	25 V
最大漏极电流 (ID)	64 A
最大漏源导通电阻	0.0056 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	256 A
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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UNISONIC TECHNOLOGIES CO., LTD

UK3919

SWITCHING N-CHANNEL

POWER MOSFET

DESCRIPTION

This

UK3919

N-Channel Logic Level MOSFET is

produced using UTC Semiconductor advanced Power

Trench process which has been tailored to make the

on-state resistance minimum and yet maintain low gate

charge for superior switching performance especially.

The

UK3919

is well suited for where low in-line power

loss is needed in a very small outline surface mount

package, such as low voltage and battery powered

applications.

Power MOSFET

FEATURES

* R

DS(ON)

= 5.6mΩ @V

= 10 V

* Low capacitance

* Optimized gate charge

* Fast switching capability

* Avalanche energy specified

*Pb-free plating product number:UK3919L

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Normal

Lead Free Plating

UK3919-TN3-R

UK3919L-TN3-R

UK3919-TN3-T

UK3919L-TN3-T

Package

TO-252

Pin Assignment

Packing

Tape Reel

Tube

www.unisonic.com.tw

1 of 6

QW-R502-200.A

UK3919-TN3-T相似产品对比

	UK3919-TN3-T	UK3919	UK3919-TN3-R	UK3919L-TN3-R	UK3919L-TN3-T
描述	SWITCHING N-CHANNEL POWER MOSFET	SWITCHING N-CHANNEL POWER MOSFET	SWITCHING N-CHANNEL POWER MOSFET	SWITCHING N-CHANNEL POWER MOSFET	SWITCHING N-CHANNEL POWER MOSFET
厂商名称	UNISONIC TECHNOLOGIES CO.,LTD	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码	TO-252	-	TO-252	TO-252	TO-252
包装说明	SMALL OUTLINE, R-PSSO-G2	-	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	4	-	4	4	4
Reach Compliance Code	compli	-	compli	compli	compli
ECCN代码	EAR99	-	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	73 mJ	-	73 mJ	73 mJ	73 mJ
配置	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	25 V	-	25 V	25 V	25 V
最大漏极电流 (ID)	64 A	-	64 A	64 A	64 A
最大漏源导通电阻	0.0056 Ω	-	0.0056 Ω	0.0056 Ω	0.0056 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252	-	TO-252	TO-252	TO-252
JESD-30 代码	R-PSSO-G2	-	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	-	1	1	1
端子数量	2	-	2	2	2
工作模式	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	256 A	-	256 A	256 A	256 A
表面贴装	YES	-	YES	YES	YES
端子形式	GULL WING	-	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	-	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	-	SILICON	SILICON	SILICON

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