UNISONIC TECHNOLOGIES CO., LTD
UK3919
SWITCHING N-CHANNEL
POWER MOSFET
DESCRIPTION
This
UK3919
N-Channel Logic Level MOSFET is
produced using UTC Semiconductor advanced Power
Trench process which has been tailored to make the
on-state resistance minimum and yet maintain low gate
charge for superior switching performance especially.
The
UK3919
is well suited for where low in-line power
loss is needed in a very small outline surface mount
package, such as low voltage and battery powered
applications.
Power MOSFET
FEATURES
* R
DS(ON)
= 5.6mΩ @V
GS
= 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
*Pb-free plating product number:UK3919L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UK3919-TN3-R
UK3919L-TN3-R
UK3919-TN3-T
UK3919L-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-200.A
UK3919
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
25
V
Gate to Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
±64
A
Pulsed Drain Current (Note1)
I
DM
±256
A
Single Avalanche Current (Note2)
I
AS
27
A
Single Avalanche Energy (Note2)
E
AS
73
mJ
Total Power Dissipation
P
D
36
W
℃
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
Drain-Source On-Resistance
SYMBOL
I
DSS
I
GSS
V
GS(OFF)
R
DS(ON)
TEST CONDITIONS
V
DS
=25 V, V
GS
=0 V
V
DS
=0 V, V
GS
=±20V
V
DS
=10V, I
D
=1mA
V
GS
=10 V, I
D
=32 A
V
GS
=5.0 V, I
D
=16 A
2.0
2.5
4.5
6.8
2050
460
330
42
8
15
16
19
53
22
0.97
23
11
MIN
TYP
MAX
10
±100
3.0
5.6
13.7
UNIT
µA
nA
V
mΩ
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=10V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Gate to Source Charge
Q
G
V
DD
=20V, V
GS
=10 V,I
D
=64 A
Gate Charge at Threshold
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=12.5V, I
D
=32 A, V
GS
=10V,
Turn-ON Rise Time
t
R
Turn-OFF Delay Time
t
D(OFF)
R
G
=10
Ω
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Body Diode Forward Voltage
V
SD
I
F
=64 A, V
GS
=0 V
Reverse Recovery Time
t
RR
I
F
= 64 A,V
GS
=0 V ,di/dt = 100 A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. PW
≤
10
μs,
Duty Cycle
≤
1%
2. Starting T
CH
= 25℃, V
DD
= 12.5 V, R
G
= 25Ω, V
GS
= 20
→
0 V
pF
nC
ns
V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-200.A
UK3919
Percentage of Rated Power,d
T
(％)
Gate Cut-off Voltage,V
GS(OFF)
(V)
Drain Current, I
D
(A)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Forward Transfer Admittance
www.unisonic.com.tw
Drain Current, I
D
(A)
Total Power Diaaipation,P
D
(W)
3 of 6
Power MOSFET
QW-R502-200.A
UK3919
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
On-State Resistance,R
DS(ON)
(mΩ)
Gate-to-Source Voltage, V
GS
(V)
Gate-to-Source Voltage, V
GS
(V)
10
8
6
4
Drain to Source On-State Resistance
vs. Channel Temperature
Capacitance, C (pF)
On-State Resistance,R
DS(ON)
(mΩ)
1000
Switching Characteristics
V
GS
=10V
100
t
f
t
d(off)
t
d(on)
10
2
I
D
=32A
Pulsed
0
-100
-50
0
50
100 150
Channel Temperature,T
CH
(℃)
200
1
0.1
t
r
V
DD
=12.5V
V
GS
=10V
R
G
=10V
1
10
Drain Current,I
D
(A)
100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-200.A
UK3919
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
1000
Diode Forward Current,I
F
(A)
100
10
1
0.1
0.01
0
Source to Drain Diode Forward Voltage
V
GS
=10V
1000
Reverse Recovery Time,t
RR
(ns)
Reverse Recovery Time VS.Diode
Forward Current
di/dt=100A/μs
V
GS
=0V
100
0V
10
Pulsed
0.5
1
1.5
Source to Drain Voltage,V
F(S-D)
(V)
1
1
10
Diode Forward Current,I
F
(A)
100
100
Single Avalanche Current,I
AS
(A)
Single Avalanche Current vs. Inductive
Load
Energy Derating Factor, (％)
120
100
80
60
40
20
Single Avalanche Energy Derating Factor
V
DD
=12.5V
R
G
=25Ω
V
GS
=20 0V
I
AS
≤27A
I
AS
=27A
E
AS
=73mJ
10
1
0.01
V
DD
=12.5V
R
G
=25Ω
V
GS
=20 0V
Starting T
CH
=25℃
0.1
1
Inductive Load,L (mH)
10
0
25
50
75
100
125
150
Starting Channel Temperature,Starting,T
CH
(℃)
Drain Current, I
D
(A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-200.A
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
