UNISONIC TECHNOLOGIES CO., LTD
UK1398
N-CHANNEL MOSFET FOR
HIGH SPEED SWITCHING
1
Power MOSFET
DESCRIPTION
The UTC
UK1398
uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or in
PWM applications.
TO-92
3
FEATURES
* R
DS(ON)
<22Ω
@V
GS
=2.5V
* R
DS(ON)
<14Ω
@V
GS
=4V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
2
1
SOT-23
SYMBOL
2.Drain
3.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UK1398L-AE3-R
UK1398G-AE3-R
UK1398L-T92-B
UK1398G-T92-B
UK1398L-T92-K
UK1398G-T92-K
UK1398L-T92-R
UK1398G-T92-R
Package
SOT-23
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
S
D
G
S
D
G
S
D
G
S
D
G
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-256.F
UK1398
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
50
V
±7.0
V
DC
±100
mA
Continuous Drain Current
I
D
Pulse(Note 2)
±200
mA
SOT-23
200
Power Dissipation
P
D
mW
TO-92
625
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≤10ms, Duty cycle≤50%
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
V
GS(OFF)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=50V, V
GS
=0V
V
GS
=±7.0V, V
DS
=0 V
V
DS
=V
GS
, I
D
=250µA
V
DS
=3.0V, I
D
=1.0µA
V
GS
=2.5V, I
D
=10mA
V
GS
=4.0V, I
D
=10mA
V
DS
=3.0V, I
D
=10mA
MIN
50
10
±5.0
1.0
0.6
3.0
1.5
40
20
TYP
MAX UNIT
V
µA
µA
V
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
1.3
V
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=3.0V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
DD
=3.0V, I
D
=20mA,
Turn-ON Rise Time
t
R
V
GS(ON)
=3.0V, R
G
=10Ω,
Turn-OFF Delay Time
t
D(OFF)
R
L
=150
Ω
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=1A, V
GS
=0V
20
1.2
22
14
38
8
7
3
15
100
30
35
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-256.F
UK1398
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, I
D
(mA)
Drain Current, I
D
(A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-256.F
UK1398
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-256.F
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