RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-2, 2 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | FLATPACK, R-CDFP-F2 |
| 针数 | 2 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 其他特性 | HGH RELIABILITY |
| 外壳连接 | SOURCE |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 65 V |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-CDFP-F2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| PTFA071701FV4 | PTFA071701FV4R250 | PTFA071701EV4R250 | PTFA071701EV4 | |
|---|---|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-2, 2 PIN | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-2, 2 PIN | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PIN | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PIN |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | FLATPACK, R-CDFP-F2 | FLATPACK, R-CDFP-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 |
| 针数 | 2 | 2 | 2 | 2 |
| Reach Compliance Code | compliant | compliant | compliant | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HGH RELIABILITY | HGH RELIABILITY | HGH RELIABILITY | HGH RELIABILITY |
| 外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 65 V | 65 V | 65 V | 65 V |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-CDFP-F2 | R-CDFP-F2 | R-CDFM-F2 | R-CDFM-F2 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK | FLATPACK | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Infineon(英飞凌) | - | Infineon(英飞凌) | Infineon(英飞凌) |
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