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Datasheet> 器件分类 > 分立半导体> 晶体管> PTFA071701FV4R250

PTFA071701FV4R250: 产品描述RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-2, 2 PIN; 产品类别分立半导体晶体管; 文件大小245KB，共9页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

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PTFA071701FV4R250概述

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-2, 2 PIN

PTFA071701FV4R250规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	FLATPACK, R-CDFP-F2
针数	2
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	HGH RELIABILITY
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	65 V
FET 技术	METAL-OXIDE SEMICONDUCTOR
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-CDFP-F2
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLATPACK
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

PTFA071701FV4R250相似产品对比

	PTFA071701FV4R250	PTFA071701EV4R250	PTFA071701FV4	PTFA071701EV4
描述	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-2, 2 PIN	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PIN	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37248-2, 2 PIN	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PIN
是否Rohs认证	符合	符合	符合	符合
包装说明	FLATPACK, R-CDFP-F2	FLANGE MOUNT, R-CDFM-F2	FLATPACK, R-CDFP-F2	FLANGE MOUNT, R-CDFM-F2
针数	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compli
ECCN代码	EAR99	EAR99	EAR99	EAR99
其他特性	HGH RELIABILITY	HGH RELIABILITY	HGH RELIABILITY	HGH RELIABILITY
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	65 V	65 V	65 V	65 V
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最高频带	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-CDFP-F2	R-CDFM-F2	R-CDFP-F2	R-CDFM-F2
元件数量	1	1	1	1
端子数量	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	200 °C	200 °C	200 °C	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	FLANGE MOUNT	FLATPACK	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
厂商名称	-	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)

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