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CTLM3410-M832DBKLEADFREE: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小402KB，共2页; 制造商Central Semiconductor; 标准

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CTLM3410-M832DBKLEADFREE概述

Transistor

CTLM3410-M832DBKLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	1 A
最小直流电流增益 (hFE)	100
最高工作温度	150 °C
极性/信道类型	NPN
最大功率耗散 (Abs)	1.65 W
表面贴装	YES
标称过渡频率 (fT)	100 MHz

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CTLM3410-M832D

CTLM7410-M832D

CTLM3474-M832D

SURFACE MOUNT

DUAL, LOW VCE (SAT)

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

TLM832D CASE

MARKING CODES:

CTLM3410-M832D: CFG

CTLM7410-M832D: CFH

CTLM3474-M832D: CFJ

APPLICATIONS

•

Switching Circuits

•

DC - DC Converters

•

LCD Backlighting

•

Battery powered / Portable Equipment

applications including Cell Phones,

Digital Cameras, Pagers, PDAs,

Notebook PCs, etc.

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLM3410-

M832D (Dual NPN), CTLM7410-M832D (Dual PNP),

and CTLM3474-M832D (Complementary NPN & PNP)

are Low VCE(SAT) Transistors packaged in the small,

thermally efficient, 3x2mm Tiny Leadless Module

(TLM™) surface mount case. These devices are

designed for applications where small size, operational

efficiency, and low energy consumption are the prime

requirements. Due to its leadless package design this

device is capable of dissipating up to 4 times the power

of similar devices in comparable sized surface mount

packages.

FEATURES

•

Dual Chip Device

•

High Current (1.0A) Transistors

•

Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX)

•

High Power to Footprint Ratio of 275mW per sq mm

(Package Power Dissipation / Package Surface Area)

•

Small TLM 3x2mm Leadless Surface Mount Package

•

Complementary Devices

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

6.0

1.0

1.65

-65 to +150

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

NPN

PNP

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

ICBO

VCB=40V

100

IEBO

VEB=6.0V

100

BVCBO

IC=100µA

BVCEO

BVEBO

VCE(SAT)

IC=10mA

IE=100µA

IC=50mA, IB=5.0mA

IC=100mA, IB=10mA

6.0

UNITS

Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm

R3 (1-August 2011)

CTLM3410-M832DBKLEADFREE相似产品对比

	CTLM3410-M832DBKLEADFREE	CTLM3474-M832DTR	CTLM3474-M832DTRLEADFREE	CTLM3410-M832DTR	CTLM7410-M832DTRLEADFREE	CTLM7410-M832DTR	CTLM3474-M832DBK	CTLM7410-M832DBK	CTLM7410-M832DBKLEADFREE	CTLM3410-M832DBK
描述	Transistor	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Small Signal Bipolar Transistor, 1A I(C), NPN and PNP	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Transistor	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10	Transistor	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, 3 X 2 MM, LEADLESS PACKAGE-10
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合	符合
包装说明	,	3 X 2 MM, LEADLESS PACKAGE-10	,	3 X 2 MM, LEADLESS PACKAGE-10	,	3 X 2 MM, LEADLESS PACKAGE-10	3 X 2 MM, LEADLESS PACKAGE-10	3 X 2 MM, LEADLESS PACKAGE-10	,	3 X 2 MM, LEADLESS PACKAGE-10
Reach Compliance Code	unknown	compliant	unknown	compliant	unknown	compliant	compliant	compliant	unknown	compliant
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
最小直流电流增益 (hFE)	100	50	100	50	100	50	50	50	100	50
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	NPN	NPN AND PNP	NPN/PNP	NPN	PNP	PNP	NPN AND PNP	PNP	PNP	NPN
最大功率耗散 (Abs)	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W	1.65 W
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
针数	-	10	-	10	-	10	10	10	-	10
ECCN代码	-	EAR99	-	EAR99	-	EAR99	EAR99	EAR99	-	EAR99
外壳连接	-	COLLECTOR	-	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR
集电极-发射极最大电压	-	25 V	-	25 V	-	25 V	25 V	25 V	-	25 V
配置	-	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS
JESD-30 代码	-	R-PDSO-N8	-	R-PDSO-N8	-	R-PDSO-N8	R-PDSO-N8	R-PDSO-N8	-	R-PDSO-N8
JESD-609代码	-	e3	-	e3	-	e3	e3	e3	-	e3
湿度敏感等级	-	1	-	1	-	1	1	1	-	1
元件数量	-	2	-	2	-	2	2	2	-	2
端子数量	-	8	-	8	-	8	8	8	-	8
封装主体材料	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
封装形式	-	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
认证状态	-	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
端子面层	-	MATTE TIN	-	MATTE TIN	-	MATTE TIN	MATTE TIN	MATTE TIN	-	MATTE TIN
端子形式	-	NO LEAD	-	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	-	NO LEAD
端子位置	-	DUAL	-	DUAL	-	DUAL	DUAL	DUAL	-	DUAL
晶体管应用	-	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING
晶体管元件材料	-	SILICON	-	SILICON	-	SILICON	SILICON	SILICON	-	SILICON

CTLM3410-M832DBKLEADFREE

CTLM3410-M832DBKLEADFREE概述

CTLM3410-M832DBKLEADFREE规格参数

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