http://www.fujielectric.com/products/semiconductor/
FMW79N60S1HF
Super J-MOS series
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by R
g
)
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Outline Drawings [mm]
TO-247-P2
Equivalent circuit schematic
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
Gate(G)
①
②
③
Drain(D)
Source(S)
CONNECTION
①
GATE
②
DRAIN
③
SOURCE
DIMENSIONS ARE IN MILLIMETERS.
①
②
③
Absolute Maximum Ratings at T
C
=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
dV
DS
/dt
dV/dt
-di/dt
P
D
T
ch
T
stg
Characteristics
600
600
±68
±43
±204
±30
13.5
3194.4
50
15
50
2.5
545
150
-55 to +150
Unit
V
V
A
A
A
V
A
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
Remarks
V
GS
=-30V
Tc=25°C Note*1
Tc=100°C Note*1
Note *2
Note *3
V
DS
≤ 600V
Note *4
Note *5
T
a
=25°C
Tc=25°C
Note *1 : Limited by maximum channel temperature.
Note *2 : T
ch
≤150°C, See Fig.1 and Fig.2
Note *3 : Starting T
ch
=25°C, I
AS
=8.1A, L=89.3mH, V
DD
=60V, R
G
=50Ω, See Fig.1 and Fig.2
E
AS
limited by maximum channel temperature and avalanche current.
Note *4 : I
F
≤-20A, -di/dt=50A/μs, V
DD
≤300V, T
ch
≤150°C.
Note *5 : I
F
≤-20A, dV/dt=15kV/μs, V
DD
≤300V, T
ch
≤150°C.
• Static Ratings
Description
Electrical Characteristics at T
C
=25°C (unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
Conditions
I
D
=250μA
V
GS
=0V
I
D
=250μA
V
DS
=V
GS
V
DS
=600V
V
GS
=0V
V
DS
=480V
V
GS
=0V
V
GS
= ±30V
V
DS
=0V
I
D
=34A
V
GS
=10V
f=1MHz, open drain
T
ch
=25°C
T
ch
=125°C
min.
600
2.5
-
-
-
-
-
typ.
-
3.0
-
-
10
0.034
1.3
max.
-
3.5
25
μA
250
100
0.04
-
nA
Ω
Ω
Unit
V
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Gate resistance
I
GSS
R
DS(on)
R
G
1
07944
May 2012
FMW79N60S1HF
• Dynamic Ratings
Description
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance,
energy related (Note *6)
Effective output capacitance,
time related (Note *7)
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source crossover Charge
Symbol
g
fs
C
iss
C
oss
C
rss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
Q
SW
Conditions
I
D
=34A
V
DS
=25V
V
DS
=10V
V
GS
=0V
f=1MHz
V
GS
=0V
V
DS
=0…480V
V
GS
=0V
V
DS
=0…480V
ID=constant
V
DD
=400V, V
GS
=10V
I
D
=34A, R
G
=6.2Ω
See Fig.3 and Fig.4
V
DD
=480V, I
D
=68A
V
GS
=10V
See Fig.5
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
min.
27.5
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
55
7000
14500
1300
350
1330
40
107
199
20
203
44
76
27
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
ns
nC
Note *6 : C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% BV
DSS
.
Note *7 : C
o(tr)
is a fixed capacitance that gives the same charging times as C
oss
while V
DS
is rising from 0 to 80% BV
DSS
.
• Reverse Diode
Description
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Symbol
I
AV
V
SD
t
rr
Q
rr
I
rp
Conditions
L=19.3mH, T
ch
=25°C
See Fig.1 and Fig.2
I
F
=68A, V
GS
=0V
T
ch
=25°C
I
F
=20A, V
GS
=0V
V
DD
=300V
-di/dt=50A/μs
T
ch
=25°C
See Fig.6
min.
13.5
-
-
-
-
typ.
-
1.0
600
8.7
29
max.
-
1.35
-
-
-
Unit
A
V
ns
μC
A
Thermal Characteristics
Description
Channel to Case
Channel to Ambient
Symbol
R
th(ch-c)
R
th(ch-a)
min.
-
-
typ.
-
-
max.
0.23
50
Unit
°C/W
°C/W
2
FMW79N60S1HF
Allowable Power Dissipation
P
D
=f(Tc)
10
2
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
600
550
500
450
400
350
P
D
[W]
300
Safe Operating Area
I
D
=f(V
DS
):Duty=0(Single pulse),Tc=25°C
t=
1µs
10µs
10
1
100µs
I
D
[A]
250
200
150
100
50
0
0
25
50
75
Tc [°C]
100
125
150
10
0
1ms
Power loss waveform :
Square waveform
P
D
t
10
-1
10
-2
10
-1
10
0
10
1
10
2
10
3
V
DS
[V]
Typical Output Characteristics
I
D
=f(V
DS
):80µs pulse test,Tch=25°C
250
150
Typical Output Characteristics
I
D
=f(V
DS
):80µs pulse test,Tch=150°C
20V
10V
8V
20V
10V
200
8V
7V
150
I
D
[A]
I
D
[A]
100
6V
5.5V
100
6V
50
5V
V
GS
=4.5V
5.5V
50
5V
V
GS
=4.5V
0
0
5
10
V
DS
[V]
15
20
25
0
0
5
10
V
DS
[V]
15
20
25
0.10
Typical Drain-Source on-state Resistance
R
DS
(on)=f(I
D
):80µs pulse test,Tch=25°C
5V
5.5V
6V
7V
0.20
Typical Drain-Source on-state Resistance
R
DS
(on)=f(I
D
):80µs pulse test,Tch=150°C
4.5V
5V
5.5V
6V
0.08
0.15
8V
R
DS
(on) [
Ω
]
R
DS
(on) [
Ω
]
0.06
10V
V
GS
=20V
0.04
8V
10V
0.10
V
GS
=20V
0.05
0.02
0.00
0
50
100
I
D
[A]
150
200
250
0.00
0
50
I
D
[A]
100
150
3
FMW79N60S1HF
Drain-Source On-state Resistance
R
DS
(on)=f(Tch):I
D
=34A,V
GS
=10V
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
6
Gate Threshold Voltage vs. Tch
V
GS
(th)=f(Tch):V
DS
=V
GS
,I
D
=250µA
0.10
5
4
R
DS
(on) [
Ω
]
V
GS
(th) [V]
max.
0.05
typ.
3
typ.
2
1
0.00
-50
-25
0
25
50
Tch [°C]
75
100
125
150
0
-50
-25
0
25
50
75
Tch [°C]
100
125
150
Typical Transfer Characteristic
I
D
=f(V
GS
):80µs pulse test,V
DS
=25V
100
Typical Transconductance
gfs=f(I
D
):80µs pulse test,V
DS
=25V
100
Tch=25℃
10
10
I
D
[A]
1
0.1
gfs [S]
150℃
Tch=25℃
150℃
1
0.01
1E-3
0
1
2
3
4
5
V
GS
[V]
6
7
8
9
10
0.1
0.1
1
I
D
[A]
10
100
Typical Forward Characteristics of Reverse Diode
I
F
=f(V
SD
):80µs pulse test
10
5
Typical Capacitance
C=f(V
DS
):V
GS
=0V,f=1MHz
100
10
4
Ciss
10
3
10
C [pF]
I
F
[A]
Coss
150℃
Tch=25℃
10
2
1
10
1
Crss
10
0
0.1
0.0
0.5
1.0
V
SD
[V]
1.5
2.0
10
-1
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
4
FMW79N60S1HF
Typical Coss stored energy
50
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
10
3
Typical Switching Characteristics vs. ID Tch=25°C
t=f(I
D
):Vdd=400V,V
GS
=10V/0V,R
G
=6.2Ω, L=500uH
tr
40
10
30
2
td(off)
Eoss [uJ]
t [ns]
td(on)
tf
20
10
1
10
0
0
100
200
300
400
500
600
10
0
10
1
10
2
V
DS
[V]
I
D
[A]
10
Typical Gate Charge Characteristics
V
GS
=f(Qg):I
D
=68A,Vdd=480V,Tch=25°C
7000
Maximum Avalanche Energy vs. startingTch
E(A
V
)=f(starting Tch):Vcc=60V,I(A
V
)<=13.5A
I
AS
=4.1A
6000
8
5000
6
E
AV
[mJ]
4000
I
AS
=8.1A
3000
I
AS
=13.5A
V
GS
[V]
4
2000
2
1000
0
0
20
40
60
80
100 120 140 160 180 200 220
Qg [nC]
0
0
25
50
75
100
125
150
starting Tch [°C]
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
1
10
0
Zth(ch-c) [℃/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
t [sec]
10
-2
10
-1
10
0
5
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