Synchronous DRAM, 4MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Microsemi |
| 零件包装代码 | BGA |
| 包装说明 | BGA, |
| 针数 | 219 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST |
| 最长访问时间 | 5.5 ns |
| 其他特性 | AUTO/SELF REFRESH |
| JESD-30 代码 | S-PBGA-B219 |
| 内存密度 | 301989888 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM |
| 内存宽度 | 72 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 219 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 4MX72 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | BGA |
| 封装形状 | SQUARE |
| 封装形式 | GRID ARRAY |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 自我刷新 | YES |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | BALL |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| WEDPN4M72V-133B2I | WEDPN4M72V-133B2C | WEDPN4M72V-133B2M | WEDPN4M72V-100B2C | WEDPN4M72V-100B2I | WEDPN4M72V-100B2M | WEDPN4M72V-125B2C | WEDPN4M72V-125B2I | WEDPN4M72V-125B2M | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Synchronous DRAM, 4MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | BGA, | BGA, BGA219,16X16,50 | BGA, | BGA, BGA219,16X16,50 | BGA, BGA219,16X16,50 | BGA, BGA219,16X16,50 | BGA, | BGA, BGA219,16X16,50 | BGA, BGA219,16X16,50 |
| 针数 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 5.5 ns | 5.5 ns | 5.5 ns | 7 ns | 7 ns | 7 ns | 6 ns | 6 ns | 6 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 |
| 内存密度 | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 70 °C | 125 °C | 70 °C | 85 °C | 125 °C | 70 °C | 85 °C | 125 °C |
| 最低工作温度 | -40 °C | - | -55 °C | - | -40 °C | -55 °C | - | -40 °C | -55 °C |
| 组织 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | MILITARY | COMMERCIAL | INDUSTRIAL | MILITARY | COMMERCIAL | INDUSTRIAL | MILITARY |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 厂商名称 | Microsemi | - | - | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi |
| 最大时钟频率 (fCLK) | - | 133 MHz | - | 100 MHz | 100 MHz | 100 MHz | - | 125 MHz | 125 MHz |
| I/O 类型 | - | COMMON | - | COMMON | COMMON | COMMON | - | COMMON | COMMON |
| 输出特性 | - | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE |
| 封装等效代码 | - | BGA219,16X16,50 | - | BGA219,16X16,50 | BGA219,16X16,50 | BGA219,16X16,50 | - | BGA219,16X16,50 | BGA219,16X16,50 |
| 电源 | - | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V | - | 3.3 V | 3.3 V |
| 刷新周期 | - | 4096 | - | 4096 | 4096 | 4096 | - | 4096 | 4096 |
| 端子节距 | - | 1.27 mm | - | 1.27 mm | 1.27 mm | 1.27 mm | - | 1.27 mm | 1.27 mm |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
