Synchronous DRAM, 4MX72, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | Microsemi |
零件包装代码 | BGA |
包装说明 | BGA, BGA219,16X16,50 |
针数 | 219 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 7 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 100 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | S-PBGA-B219 |
内存密度 | 301989888 bit |
内存集成电路类型 | SYNCHRONOUS DRAM |
内存宽度 | 72 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 219 |
字数 | 4194304 words |
字数代码 | 4000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 4MX72 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | BGA |
封装等效代码 | BGA219,16X16,50 |
封装形状 | SQUARE |
封装形式 | GRID ARRAY |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 3.3 V |
认证状态 | Not Qualified |
刷新周期 | 4096 |
自我刷新 | YES |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | BALL |
端子节距 | 1.27 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
WEDPN4M72V-100B2C | WEDPN4M72V-133B2C | WEDPN4M72V-133B2M | WEDPN4M72V-100B2I | WEDPN4M72V-100B2M | WEDPN4M72V-125B2C | WEDPN4M72V-125B2I | WEDPN4M72V-125B2M | WEDPN4M72V-133B2I | |
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描述 | Synchronous DRAM, 4MX72, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 7ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 | Synchronous DRAM, 4MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | BGA, BGA219,16X16,50 | BGA, BGA219,16X16,50 | BGA, | BGA, BGA219,16X16,50 | BGA, BGA219,16X16,50 | BGA, | BGA, BGA219,16X16,50 | BGA, BGA219,16X16,50 | BGA, |
针数 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 7 ns | 5.5 ns | 5.5 ns | 7 ns | 7 ns | 6 ns | 6 ns | 6 ns | 5.5 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 | S-PBGA-B219 |
内存密度 | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit |
内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
内存宽度 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 |
字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 125 °C | 85 °C | 125 °C | 70 °C | 85 °C | 125 °C | 85 °C |
最低工作温度 | - | - | -55 °C | -40 °C | -55 °C | - | -40 °C | -55 °C | -40 °C |
组织 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 | 4MX72 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | MILITARY | INDUSTRIAL | MILITARY | COMMERCIAL | INDUSTRIAL | MILITARY | INDUSTRIAL |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
厂商名称 | Microsemi | - | - | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi |
最大时钟频率 (fCLK) | 100 MHz | 133 MHz | - | 100 MHz | 100 MHz | - | 125 MHz | 125 MHz | - |
I/O 类型 | COMMON | COMMON | - | COMMON | COMMON | - | COMMON | COMMON | - |
输出特性 | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | - |
封装等效代码 | BGA219,16X16,50 | BGA219,16X16,50 | - | BGA219,16X16,50 | BGA219,16X16,50 | - | BGA219,16X16,50 | BGA219,16X16,50 | - |
电源 | 3.3 V | 3.3 V | - | 3.3 V | 3.3 V | - | 3.3 V | 3.3 V | - |
刷新周期 | 4096 | 4096 | - | 4096 | 4096 | - | 4096 | 4096 | - |
端子节距 | 1.27 mm | 1.27 mm | - | 1.27 mm | 1.27 mm | - | 1.27 mm | 1.27 mm | - |
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