OTP ROM, 128KX8, 200ns, CMOS, CQCC32, HERMETIC SEALED, LCC-32
参数名称 | 属性值 |
厂商名称 | Rochester Electronics |
包装说明 | QCCN, |
Reach Compliance Code | unknown |
最长访问时间 | 200 ns |
JESD-30 代码 | R-CQCC-N32 |
JESD-609代码 | e0 |
内存密度 | 1048576 bit |
内存集成电路类型 | OTP ROM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 32 |
字数 | 131072 words |
字数代码 | 128000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 128KX8 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | QCCN |
封装形状 | RECTANGULAR |
封装形式 | CHIP CARRIER |
并行/串行 | PARALLEL |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | TIN LEAD |
端子形式 | NO LEAD |
端子位置 | QUAD |
CY27C010-200LMB | CY27C010-90LMB | CY27C010-120DMB | CY27C010-200DMB | CY27C010-150DMB | |
---|---|---|---|---|---|
描述 | OTP ROM, 128KX8, 200ns, CMOS, CQCC32, HERMETIC SEALED, LCC-32 | OTP ROM, 128KX8, 90ns, CMOS, CQCC32, HERMETIC SEALED, LCC-32 | OTP ROM, 128KX8, 120ns, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, CERDIP-32 | OTP ROM, 128KX8, 200ns, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, CERDIP-32 | OTP ROM, 128KX8, 150ns, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, CERDIP-32 |
厂商名称 | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
包装说明 | QCCN, | QCCN, | DIP, | DIP, | DIP, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
最长访问时间 | 200 ns | 90 ns | 120 ns | 200 ns | 150 ns |
JESD-30 代码 | R-CQCC-N32 | R-CQCC-N32 | R-GDIP-T32 | R-GDIP-T32 | R-GDIP-T32 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
内存集成电路类型 | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM |
内存宽度 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 32 | 32 | 32 | 32 | 32 |
字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
封装代码 | QCCN | QCCN | DIP | DIP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | QUAD | QUAD | DUAL | DUAL | DUAL |
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