FIFO, 4KX9, 35ns, Asynchronous, CMOS, PDIP28
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | SAMSUNG(三星) |
| 包装说明 | DIP, DIP28,.6 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 35 ns |
| 最大时钟频率 (fCLK) | 22.2 MHz |
| JESD-30 代码 | R-PDIP-T28 |
| JESD-609代码 | e0 |
| 内存密度 | 36864 bit |
| 内存集成电路类型 | OTHER FIFO |
| 内存宽度 | 9 |
| 湿度敏感等级 | 3 |
| 端子数量 | 28 |
| 字数 | 4096 words |
| 字数代码 | 4000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 4KX9 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.005 A |
| 最大压摆率 | 0.1 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| KM75C104API-35 | KM75C104API-25 | KM75C104ANI-50 | KM75C104ANI-25 | KM75C104AJI-20 | KM75C104ANI-20 | KM75C104AP-50 | KM75C104API-20 | KM75C104API-50 | KM75C104AN-50 | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | FIFO, 4KX9, 35ns, Asynchronous, CMOS, PDIP28 | FIFO, 4KX9, 25ns, Asynchronous, CMOS, PDIP28 | FIFO, 4KX9, 50ns, Asynchronous, CMOS, PDIP28 | FIFO, 4KX9, 25ns, Asynchronous, CMOS, PDIP28 | FIFO, 4KX9, 20ns, Asynchronous, CMOS, PQCC32 | FIFO, 4KX9, 20ns, Asynchronous, CMOS, PDIP28 | FIFO, 4KX9, 50ns, Asynchronous, CMOS, PDIP28 | FIFO, 4KX9, 20ns, Asynchronous, CMOS, PDIP28 | FIFO, 4KX9, 50ns, Asynchronous, CMOS, PDIP28 | FIFO, 4KX9, 50ns, Asynchronous, CMOS, PDIP28 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.3 | DIP, DIP28,.3 | QCCJ, LDCC32,.5X.6 | DIP, DIP28,.3 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow | unknow | unknow | unknow | unknow | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 35 ns | 25 ns | 50 ns | 25 ns | 20 ns | 20 ns | 50 ns | 20 ns | 50 ns | 50 ns |
| JESD-30 代码 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PQCC-J32 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 36864 bit | 36864 bit | 36864 bit | 36864 bit | 36864 bi | 36864 bi | 36864 bi | 36864 bi | 36864 bi | 36864 bit |
| 内存集成电路类型 | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
| 内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 端子数量 | 28 | 28 | 28 | 28 | 32 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words |
| 字数代码 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 70 °C | 85 °C | 85 °C | 70 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | - | -40 °C | -40 °C | - |
| 组织 | 4KX9 | 4KX9 | 4KX9 | 4KX9 | 4KX9 | 4KX9 | 4KX9 | 4KX9 | 4KX9 | 4KX9 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | QCCJ | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP28,.6 | DIP28,.6 | DIP28,.3 | DIP28,.3 | LDCC32,.5X.6 | DIP28,.3 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A |
| 最大压摆率 | 0.1 mA | 0.12 mA | 0.06 mA | 0.12 mA | 0.12 mA | 0.12 mA | 0.06 mA | 0.12 mA | 0.06 mA | 0.06 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | YES | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | QUAD | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | - |
| 最大时钟频率 (fCLK) | 22.2 MHz | 28.6 MHz | - | 28.6 MHz | 33.3 MHz | 33.3 MHz | - | 33.3 MHz | - | - |
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