256M X 8 DDR DRAM, 20 ns, PBGA78
256M × 8 双倍速率同步动态随机存储器 动态随机存取存储器, 20 ns, PBGA78
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | SK Hynix(海力士) |
| 零件包装代码 | BGA |
| 包装说明 | HBGA, BGA78,9X13,32 |
| 针数 | 78 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 访问模式 | MULTI BANK PAGE BURST |
| 最长访问时间 | 20 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 533 MHz |
| I/O 类型 | COMMON |
| 交错的突发长度 | 4,8 |
| JESD-30 代码 | R-PBGA-B78 |
| JESD-609代码 | e1 |
| 长度 | 11 mm |
| 内存密度 | 2147483648 bi |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 78 |
| 字数 | 268435456 words |
| 字数代码 | 256000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | |
| 组织 | 256MX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | HBGA |
| 封装等效代码 | BGA78,9X13,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, HEAT SINK/SLUG |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 1.5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 8192 |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 连续突发长度 | 4,8 |
| 最大待机电流 | 0.012 A |
| 最大压摆率 | 0.145 mA |
| 最大供电电压 (Vsup) | 1.575 V |
| 最小供电电压 (Vsup) | 1.425 V |
| 标称供电电压 (Vsup) | 1.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 |
| 宽度 | 7.5 mm |
| H5TQ2G83CFR-G7C | H5TQ2G43CFR | H5TQ2G43CFR-G7C | H5TQ2G43CFR-PBC | H5TQ2G43CFR-RDC | H5TQ2G43CFR-TEC | H5TQ2G83CFR-H9C | H5TQ2G83CFR-PBC | H5TQ2G83CFR-RDC | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | 256M X 8 DDR DRAM, 20 ns, PBGA78 | 256M X 8 DDR DRAM, 20 ns, PBGA78 | 256M X 8 DDR DRAM, 20 ns, PBGA78 | 256M X 8 DDR DRAM, 20 ns, PBGA78 | 256M X 8 DDR DRAM, 20 ns, PBGA78 | 256M X 8 DDR DRAM, 20 ns, PBGA78 | 256M X 8 DDR DRAM, 20 ns, PBGA78 | 256M X 8 DDR DRAM, 20 ns, PBGA78 | 256M X 8 DDR DRAM, 20 ns, PBGA78 |
| 内存宽度 | 8 | 8 | 4 | 4 | 4 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 78 | 78 | 78 | 78 | 78 | 78 | 78 | 78 | 78 |
| 组织 | 256MX8 | 256M × 8 | 512MX4 | 512MX4 | 512MX4 | 256M × 8 | 256MX8 | 256MX8 | 256MX8 |
| 表面贴装 | YES | Yes | YES | YES | YES | Yes | YES | YES | YES |
| 温度等级 | OTHER | 其他 | OTHER | OTHER | OTHER | 其他 | OTHER | OTHER | OTHER |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | - | 符合 | 符合 | 符合 |
| 厂商名称 | SK Hynix(海力士) | - | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | - | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 零件包装代码 | BGA | - | BGA | BGA | BGA | - | BGA | BGA | BGA |
| 包装说明 | HBGA, BGA78,9X13,32 | - | HBGA, BGA78,9X13,32 | HBGA, BGA78,9X13,32 | HBGA, BGA78,9X13,32 | - | HBGA, BGA78,9X13,32 | HBGA, BGA78,9X13,32 | HBGA, BGA78,9X13,32 |
| 针数 | 78 | - | 78 | 78 | 78 | - | 78 | 78 | 78 |
| Reach Compliance Code | compli | - | compli | compli | compli | - | compli | compli | compli |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 访问模式 | MULTI BANK PAGE BURST | - | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | - | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
| 最长访问时间 | 20 ns | - | 20 ns | 20 ns | 20 ns | - | 20 ns | 20 ns | 20 ns |
| 其他特性 | AUTO/SELF REFRESH | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 533 MHz | - | 533 MHz | 800 MHz | 933 MHz | - | 667 MHz | 800 MHz | 933 MHz |
| I/O 类型 | COMMON | - | COMMON | COMMON | COMMON | - | COMMON | COMMON | COMMON |
| 交错的突发长度 | 4,8 | - | 4,8 | 4,8 | 4,8 | - | 4,8 | 4,8 | 4,8 |
| JESD-30 代码 | R-PBGA-B78 | - | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 | - | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 |
| JESD-609代码 | e1 | - | e1 | e1 | e1 | - | e1 | e1 | e1 |
| 长度 | 11 mm | - | 11 mm | 11 mm | 11 mm | - | 11 mm | 11 mm | 11 mm |
| 内存密度 | 2147483648 bi | - | 2147483648 bi | 2147483648 bi | 2147483648 bi | - | 2147483648 bi | 2147483648 bi | 2147483648 bi |
| 内存集成电路类型 | DDR DRAM | - | DDR DRAM | DDR DRAM | DDR DRAM | - | DDR DRAM | DDR DRAM | DDR DRAM |
| 端口数量 | 1 | - | 1 | 1 | 1 | - | 1 | 1 | 1 |
| 字数 | 268435456 words | - | 536870912 words | 536870912 words | 536870912 words | - | 268435456 words | 268435456 words | 268435456 words |
| 字数代码 | 256000000 | - | 512000000 | 512000000 | 512000000 | - | 256000000 | 256000000 | 256000000 |
| 工作模式 | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | - | 85 °C | 85 °C | 85 °C | - | 85 °C | 85 °C | 85 °C |
| 输出特性 | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | HBGA | - | HBGA | HBGA | HBGA | - | HBGA | HBGA | HBGA |
| 封装等效代码 | BGA78,9X13,32 | - | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 | - | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, HEAT SINK/SLUG | - | GRID ARRAY, HEAT SINK/SLUG | GRID ARRAY, HEAT SINK/SLUG | GRID ARRAY, HEAT SINK/SLUG | - | GRID ARRAY, HEAT SINK/SLUG | GRID ARRAY, HEAT SINK/SLUG | GRID ARRAY, HEAT SINK/SLUG |
| 峰值回流温度（摄氏度） | 260 | - | 260 | 260 | 260 | - | 260 | 260 | 260 |
| 电源 | 1.5 V | - | 1.5 V | 1.5 V | 1.5 V | - | 1.5 V | 1.5 V | 1.5 V |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | - | 8192 | 8192 | 8192 | - | 8192 | 8192 | 8192 |
| 座面最大高度 | 1.2 mm | - | 1.2 mm | 1.2 mm | 1.2 mm | - | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | - | YES | YES | YES | - | YES | YES | YES |
| 连续突发长度 | 4,8 | - | 4,8 | 4,8 | 4,8 | - | 4,8 | 4,8 | 4,8 |
| 最大待机电流 | 0.012 A | - | 0.012 A | 0.012 A | - | - | 0.012 A | 0.012 A | - |
| 最大压摆率 | 0.145 mA | - | 0.145 mA | 0.185 mA | - | - | 0.18 mA | 0.185 mA | - |
| 最大供电电压 (Vsup) | 1.575 V | - | 1.575 V | 1.575 V | 1.575 V | - | 1.575 V | 1.575 V | 1.575 V |
| 最小供电电压 (Vsup) | 1.425 V | - | 1.425 V | 1.425 V | 1.425 V | - | 1.425 V | 1.425 V | 1.425 V |
| 标称供电电压 (Vsup) | 1.5 V | - | 1.5 V | 1.5 V | 1.5 V | - | 1.5 V | 1.5 V | 1.5 V |
| 技术 | CMOS | - | CMOS | CMOS | CMOS | - | CMOS | CMOS | CMOS |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | - | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | - | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子节距 | 0.8 mm | - | 0.8 mm | 0.8 mm | 0.8 mm | - | 0.8 mm | 0.8 mm | 0.8 mm |
| 处于峰值回流温度下的最长时间 | 20 | - | 20 | 20 | 20 | - | 20 | 20 | 20 |
| 宽度 | 7.5 mm | - | 7.5 mm | 7.5 mm | 7.5 mm | - | 7.5 mm | 7.5 mm | 7.5 mm |
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